2N7002T vs 2N7002K-E3 feature comparison

2N7002T Galaxy Microelectronics

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2N7002K-E3 Vishay Siliconix

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Rohs Code Yes Yes
Part Life Cycle Code Obsolete Active
Ihs Manufacturer CHANGZHOU GALAXY CENTURY MICROELECTRONICS CO LTD VISHAY SILICONIX
Part Package Code SOT-523 SOT-23
Reach Compliance Code unknown unknown
ECCN Code EAR99 EAR99
Configuration SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 60 V 60 V
Drain Current-Max (ID) 0.115 A 0.3 A
Drain-source On Resistance-Max 7.5 Ω 2 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR
Feedback Cap-Max (Crss) 5 pF
JESD-30 Code R-PDSO-G3 R-PDSO-G3
Number of Elements 1 1
Number of Terminals 3 3
Operating Mode ENHANCEMENT MODE ENHANCEMENT MODE
Operating Temperature-Max 150 °C 150 °C
Operating Temperature-Min -55 °C
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape RECTANGULAR RECTANGULAR
Package Style SMALL OUTLINE SMALL OUTLINE
Peak Reflow Temperature (Cel) NOT SPECIFIED 260
Polarity/Channel Type N-CHANNEL N-CHANNEL
Surface Mount YES YES
Terminal Form GULL WING GULL WING
Terminal Position DUAL DUAL
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED 30
Transistor Application SWITCHING SWITCHING
Transistor Element Material SILICON SILICON
Base Number Matches 14 2
Pbfree Code Yes
Package Description SMALL OUTLINE, R-PDSO-G3
Pin Count 3
JEDEC-95 Code TO-236
JESD-609 Code e3
Moisture Sensitivity Level 1
Power Dissipation-Max (Abs) 0.35 W
Qualification Status Not Qualified
Terminal Finish MATTE TIN

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