2N7002TBT/R7
vs
2N7002K-H
feature comparison
| Rohs Code |
Yes
|
Yes
|
| Part Life Cycle Code |
Not Recommended
|
Active
|
| Ihs Manufacturer |
PAN JIT INTERNATIONAL INC
|
FORMOSA MICROSEMI CO LTD
|
| Package Description |
ROHS COMPLIANT, PLASTIC PACKAGE-3
|
,
|
| Pin Count |
3
|
|
| Reach Compliance Code |
compliant
|
unknown
|
| ECCN Code |
EAR99
|
EAR99
|
| Additional Feature |
ULTRA LOW RESISTANCE
|
|
| Configuration |
SINGLE WITH BUILT-IN DIODE
|
SINGLE
|
| DS Breakdown Voltage-Min |
60 V
|
|
| Drain Current-Max (ID) |
0.115 A
|
0.3 A
|
| Drain-source On Resistance-Max |
5 Ω
|
|
| FET Technology |
METAL-OXIDE SEMICONDUCTOR
|
METAL-OXIDE SEMICONDUCTOR
|
| Feedback Cap-Max (Crss) |
5 pF
|
|
| JESD-30 Code |
R-PDSO-F3
|
|
| Number of Elements |
1
|
1
|
| Number of Terminals |
3
|
|
| Operating Mode |
ENHANCEMENT MODE
|
|
| Package Body Material |
PLASTIC/EPOXY
|
|
| Package Shape |
RECTANGULAR
|
|
| Package Style |
SMALL OUTLINE
|
|
| Peak Reflow Temperature (Cel) |
NOT SPECIFIED
|
|
| Polarity/Channel Type |
N-CHANNEL
|
N-CHANNEL
|
| Surface Mount |
YES
|
YES
|
| Terminal Form |
FLAT
|
|
| Terminal Position |
DUAL
|
|
| Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED
|
|
| Transistor Application |
SWITCHING
|
|
| Transistor Element Material |
SILICON
|
|
| Base Number Matches |
1
|
1
|
| Operating Temperature-Max |
|
150 °C
|
| Power Dissipation-Max (Abs) |
|
0.35 W
|
|
|
|
Compare 2N7002TBT/R7 with alternatives
Compare 2N7002K-H with alternatives