2SC3356-T1B vs 2SC3356-T1B-A feature comparison

2SC3356-T1B NEC Compound Semiconductor Devices Ltd

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2SC3356-T1B-A Renesas Electronics Corporation

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Part Life Cycle Code Transferred Obsolete
Ihs Manufacturer NEC COMPOUND SEMICONDUCTOR DEVICES LTD RENESAS ELECTRONICS CORP
Package Description MINIMOLD PACKAGE-3
Reach Compliance Code unknown unknown
ECCN Code EAR99 EAR99
Collector Current-Max (IC) 0.1 A 0.1 A
Collector-Base Capacitance-Max 1 pF 1 pF
Collector-Emitter Voltage-Max 12 V 12 V
Configuration SINGLE SINGLE
Highest Frequency Band ULTRA HIGH FREQUENCY BAND ULTRA HIGH FREQUENCY BAND
JESD-30 Code R-PDSO-G3 R-PDSO-G3
Number of Elements 1 1
Number of Terminals 3 3
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape RECTANGULAR RECTANGULAR
Package Style SMALL OUTLINE SMALL OUTLINE
Polarity/Channel Type NPN NPN
Qualification Status Not Qualified
Surface Mount YES YES
Terminal Form GULL WING GULL WING
Terminal Position DUAL DUAL
Transistor Application AMPLIFIER AMPLIFIER
Transistor Element Material SILICON SILICON
Transition Frequency-Nom (fT) 7000 MHz 7000 MHz
Base Number Matches 5 1
Pbfree Code Yes
Rohs Code Yes
Samacsys Manufacturer Renesas Electronics
DC Current Gain-Min (hFE) 50
Operating Temperature-Max 150 °C
Peak Reflow Temperature (Cel) 260
Power Dissipation-Max (Abs) 0.2 W

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