2SC4182 vs 2SC4926 feature comparison

2SC4182 NEC Compound Semiconductor Devices Ltd

Buy Now Datasheet

2SC4926 Hitachi Ltd

Buy Now Datasheet
Part Life Cycle Code Obsolete Transferred
Ihs Manufacturer NEC COMPOUND SEMICONDUCTOR DEVICES LTD HITACHI LTD
Package Description PLASTIC, SUPERMINI-3 SMALL OUTLINE, R-PDSO-G4
Reach Compliance Code unknown unknown
ECCN Code EAR99 EAR99
Collector Current-Max (IC) 0.05 A 0.05 A
Collector-Base Capacitance-Max 1.5 pF 1.1 pF
Collector-Emitter Voltage-Max 15 V 8 V
Configuration SINGLE SINGLE
DC Current Gain-Min (hFE) 60 50
Highest Frequency Band ULTRA HIGH FREQUENCY BAND ULTRA HIGH FREQUENCY BAND
JESD-30 Code R-PDSO-G3 R-PDSO-G4
Number of Elements 1 1
Number of Terminals 3 4
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape RECTANGULAR RECTANGULAR
Package Style SMALL OUTLINE SMALL OUTLINE
Polarity/Channel Type NPN NPN
Power Dissipation Ambient-Max 0.16 W
Qualification Status Not Qualified Not Qualified
Surface Mount YES YES
Terminal Form GULL WING GULL WING
Terminal Position DUAL DUAL
Transistor Application AMPLIFIER AMPLIFIER
Transistor Element Material SILICON SILICON
Transition Frequency-Nom (fT) 1100 MHz 11000 MHz
Base Number Matches 2 2
Pin Count 4
Additional Feature LOW NOISE
Case Connection COLLECTOR
Operating Temperature-Max 150 °C
Power Dissipation-Max (Abs) 0.15 W

Compare 2SC4182 with alternatives

Compare 2SC4926 with alternatives