2SJ653
vs
2SK850
feature comparison
| Rohs Code |
Yes
|
|
| Part Life Cycle Code |
Obsolete
|
Obsolete
|
| Ihs Manufacturer |
ONSEMI
|
TOSHIBA CORP
|
| Part Package Code |
TO-220AB
|
|
| Package Description |
TO-220ML, FULL PACK-3
|
FLANGE MOUNT, R-PSFM-T3
|
| Pin Count |
3
|
|
| Reach Compliance Code |
unknown
|
unknown
|
| ECCN Code |
EAR99
|
EAR99
|
| HTS Code |
8541.29.00.95
|
8541.29.00.95
|
| Factory Lead Time |
4 Weeks
|
|
| Case Connection |
ISOLATED
|
DRAIN
|
| Configuration |
SINGLE
|
SINGLE
|
| DS Breakdown Voltage-Min |
60 V
|
100 V
|
| Drain Current-Max (ID) |
37 A
|
35 A
|
| Drain-source On Resistance-Max |
0.037 Ω
|
0.06 Ω
|
| FET Technology |
METAL-OXIDE SEMICONDUCTOR
|
METAL-OXIDE SEMICONDUCTOR
|
| JEDEC-95 Code |
TO-220AB
|
|
| JESD-30 Code |
R-PSFM-T3
|
R-PSFM-T3
|
| Number of Elements |
1
|
1
|
| Number of Terminals |
3
|
3
|
| Operating Mode |
DEPLETION MODE
|
ENHANCEMENT MODE
|
| Package Body Material |
PLASTIC/EPOXY
|
PLASTIC/EPOXY
|
| Package Shape |
RECTANGULAR
|
RECTANGULAR
|
| Package Style |
FLANGE MOUNT
|
FLANGE MOUNT
|
| Polarity/Channel Type |
P-CHANNEL
|
N-CHANNEL
|
| Pulsed Drain Current-Max (IDM) |
148 A
|
|
| Qualification Status |
Not Qualified
|
Not Qualified
|
| Surface Mount |
NO
|
NO
|
| Terminal Finish |
Tin/Copper/Silver/Nickel (Sn/Cu/Ag/Ni)
|
|
| Terminal Form |
THROUGH-HOLE
|
THROUGH-HOLE
|
| Terminal Position |
SINGLE
|
SINGLE
|
| Transistor Application |
SWITCHING
|
SWITCHING
|
| Transistor Element Material |
SILICON
|
SILICON
|
| Base Number Matches |
1
|
1
|
| Power Dissipation Ambient-Max |
|
150 W
|
|
|
|
Compare 2SJ653 with alternatives
Compare 2SK850 with alternatives