2SK1120
vs
MTW6N100E
feature comparison
| Rohs Code |
No
|
No
|
| Part Life Cycle Code |
Obsolete
|
Obsolete
|
| Ihs Manufacturer |
TOSHIBA CORP
|
ON SEMICONDUCTOR
|
| Package Description |
2-16C1B, 3 PIN
|
CASE 340K-01, 3 PIN
|
| Pin Count |
3
|
3
|
| Reach Compliance Code |
unknown
|
not_compliant
|
| ECCN Code |
EAR99
|
EAR99
|
| Samacsys Manufacturer |
Toshiba
|
|
| Case Connection |
DRAIN
|
DRAIN
|
| Configuration |
SINGLE WITH BUILT-IN DIODE
|
SINGLE WITH BUILT-IN DIODE
|
| DS Breakdown Voltage-Min |
1000 V
|
1000 V
|
| Drain Current-Max (ID) |
8 A
|
6 A
|
| Drain-source On Resistance-Max |
1.8 Ω
|
1.5 Ω
|
| FET Technology |
METAL-OXIDE SEMICONDUCTOR
|
METAL-OXIDE SEMICONDUCTOR
|
| JESD-30 Code |
R-PSFM-T3
|
R-PSFM-T3
|
| JESD-609 Code |
e0
|
e0
|
| Number of Elements |
1
|
1
|
| Number of Terminals |
3
|
3
|
| Operating Mode |
ENHANCEMENT MODE
|
ENHANCEMENT MODE
|
| Operating Temperature-Max |
150 °C
|
150 °C
|
| Package Body Material |
PLASTIC/EPOXY
|
PLASTIC/EPOXY
|
| Package Shape |
RECTANGULAR
|
RECTANGULAR
|
| Package Style |
FLANGE MOUNT
|
FLANGE MOUNT
|
| Polarity/Channel Type |
N-CHANNEL
|
N-CHANNEL
|
| Power Dissipation-Max (Abs) |
150 W
|
180 W
|
| Pulsed Drain Current-Max (IDM) |
24 A
|
18 A
|
| Qualification Status |
Not Qualified
|
Not Qualified
|
| Surface Mount |
NO
|
NO
|
| Terminal Finish |
TIN LEAD
|
TIN LEAD
|
| Terminal Form |
THROUGH-HOLE
|
THROUGH-HOLE
|
| Terminal Position |
SINGLE
|
SINGLE
|
| Transistor Application |
SWITCHING
|
SWITCHING
|
| Transistor Element Material |
SILICON
|
SILICON
|
| Base Number Matches |
2
|
2
|
| Part Package Code |
|
TO-247AE
|
| Manufacturer Package Code |
|
CASE 340K-01
|
| Additional Feature |
|
HIGH VOLTAGE
|
| Avalanche Energy Rating (Eas) |
|
720 mJ
|
| JEDEC-95 Code |
|
TO-247AE
|
| Peak Reflow Temperature (Cel) |
|
235
|
|
|
|
Compare 2SK1120 with alternatives
Compare MTW6N100E with alternatives