There are no models available for this part yet.
Overview of MTW6N100E by onsemi
Note: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
- Distributor Offerings: ( 0 listings )
- Number of FFF Equivalents: ( 4 replacements )
- CAD Models: ( Request Part )
- Number of Functional Equivalents: ( 4 options )
- Part Data Attributes ( Available )
- Reference Designs: ( Not Available )
Where used in Applications:
Space Technology
Environmental Monitoring
Internet of Things (IoT)
Smart Cities
Agriculture Technology
Virtual Reality (VR), Augmented Reality (AR), and Vision Systems
Medical Imaging
Consumer Electronics
Education and Research
Security and Surveillance
Aerospace and Defense
Healthcare
Robotics and Drones
CAD Models for MTW6N100E by onsemi
Part Data Attributes for MTW6N100E by onsemi
|
|
|
|---|---|
|
Rohs Code
|
No
|
|
Part Life Cycle Code
|
Obsolete
|
|
Ihs Manufacturer
|
ON SEMICONDUCTOR
|
|
Part Package Code
|
TO-247AE
|
|
Package Description
|
CASE 340K-01, 3 PIN
|
|
Pin Count
|
3
|
|
Manufacturer Package Code
|
CASE 340K-01
|
|
Reach Compliance Code
|
not_compliant
|
|
ECCN Code
|
EAR99
|
|
Additional Feature
|
HIGH VOLTAGE
|
|
Avalanche Energy Rating (Eas)
|
720 mJ
|
|
Case Connection
|
DRAIN
|
|
Configuration
|
SINGLE WITH BUILT-IN DIODE
|
|
DS Breakdown Voltage-Min
|
1000 V
|
|
Drain Current-Max (ID)
|
6 A
|
|
Drain-source On Resistance-Max
|
1.5 Ω
|
|
FET Technology
|
METAL-OXIDE SEMICONDUCTOR
|
|
JEDEC-95 Code
|
TO-247AE
|
|
JESD-30 Code
|
R-PSFM-T3
|
|
JESD-609 Code
|
e0
|
|
Number of Elements
|
1
|
|
Number of Terminals
|
3
|
|
Operating Mode
|
ENHANCEMENT MODE
|
|
Operating Temperature-Max
|
150 °C
|
|
Package Body Material
|
PLASTIC/EPOXY
|
|
Package Shape
|
RECTANGULAR
|
|
Package Style
|
FLANGE MOUNT
|
|
Peak Reflow Temperature (Cel)
|
235
|
|
Polarity/Channel Type
|
N-CHANNEL
|
|
Power Dissipation-Max (Abs)
|
180 W
|
|
Pulsed Drain Current-Max (IDM)
|
18 A
|
|
Qualification Status
|
Not Qualified
|
|
Surface Mount
|
NO
|
|
Terminal Finish
|
TIN LEAD
|
|
Terminal Form
|
THROUGH-HOLE
|
|
Terminal Position
|
SINGLE
|
|
Transistor Application
|
SWITCHING
|
|
Transistor Element Material
|
SILICON
|
Alternate Parts for MTW6N100E
This table gives cross-reference parts and alternative options found for MTW6N100E. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of MTW6N100E, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Description | Manufacturer | Compare |
|---|---|---|---|
| IRFPG50PBF | Power Field-Effect Transistor, 6.1A I(D), 1000V, 2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247, ROHS COMPLIANT PACKAGE-3 | Vishay Siliconix | MTW6N100E vs IRFPG50PBF |
| IRFPG50 | Power Field-Effect Transistor, 6.1A I(D), 1000V, 2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AC | International Rectifier | MTW6N100E vs IRFPG50 |
| 2SK1120 | TRANSISTOR 8 A, 1000 V, 1.8 ohm, N-CHANNEL, Si, POWER, MOSFET, ROHS COMPLIANT, 2-16C1B, 3 PIN, FET General Purpose Power | Toshiba America Electronic Components | MTW6N100E vs 2SK1120 |
| STW7NA100 | 7A, 1000V, 1.7ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247 | STMicroelectronics | MTW6N100E vs STW7NA100 |