2SK3408-T1B-AT
vs
2SK3408(0)-T1B-A
feature comparison
| Pbfree Code |
Yes
|
Yes
|
| Rohs Code |
Yes
|
Yes
|
| Part Life Cycle Code |
Obsolete
|
Obsolete
|
| Ihs Manufacturer |
RENESAS ELECTRONICS CORP
|
RENESAS ELECTRONICS CORP
|
| Part Package Code |
TMM
|
TMM
|
| Package Description |
SMALL OUTLINE, R-PDSO-G3
|
SMALL OUTLINE, R-PDSO-G3
|
| Pin Count |
3
|
3
|
| Manufacturer Package Code |
PTSP0003ZC
|
PTSP0003ZC-A3
|
| Reach Compliance Code |
compliant
|
compliant
|
| ECCN Code |
EAR99
|
EAR99
|
| HTS Code |
8541.21.00.95
|
8541.21.00.95
|
| Samacsys Manufacturer |
Renesas Electronics
|
Renesas Electronics
|
| Configuration |
SINGLE WITH BUILT-IN DIODE
|
SINGLE WITH BUILT-IN DIODE
|
| DS Breakdown Voltage-Min |
43 V
|
43 V
|
| Drain Current-Max (ID) |
1 A
|
1 A
|
| Drain-source On Resistance-Max |
0.26 Ω
|
0.26 Ω
|
| FET Technology |
METAL-OXIDE SEMICONDUCTOR
|
METAL-OXIDE SEMICONDUCTOR
|
| Feedback Cap-Max (Crss) |
30 pF
|
30 pF
|
| JESD-30 Code |
R-PDSO-G3
|
R-PDSO-G3
|
| Number of Elements |
1
|
1
|
| Number of Terminals |
3
|
3
|
| Operating Mode |
ENHANCEMENT MODE
|
ENHANCEMENT MODE
|
| Operating Temperature-Max |
150 °C
|
150 °C
|
| Package Body Material |
PLASTIC/EPOXY
|
PLASTIC/EPOXY
|
| Package Shape |
RECTANGULAR
|
RECTANGULAR
|
| Package Style |
SMALL OUTLINE
|
SMALL OUTLINE
|
| Peak Reflow Temperature (Cel) |
NOT SPECIFIED
|
|
| Polarity/Channel Type |
N-CHANNEL
|
N-CHANNEL
|
| Power Dissipation Ambient-Max |
0.2 W
|
0.2 W
|
| Power Dissipation-Max (Abs) |
1.25 W
|
1.25 W
|
| Surface Mount |
YES
|
YES
|
| Terminal Form |
GULL WING
|
GULL WING
|
| Terminal Position |
DUAL
|
DUAL
|
| Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED
|
|
| Transistor Application |
SWITCHING
|
SWITCHING
|
| Transistor Element Material |
SILICON
|
SILICON
|
| Base Number Matches |
1
|
2
|
| JESD-609 Code |
|
e6
|
| Terminal Finish |
|
TIN BISMUTH
|
|
|
|
Compare 2SK3408-T1B-AT with alternatives
Compare 2SK3408(0)-T1B-A with alternatives