3G1 vs 1N5809D3A-JQRS.RAD feature comparison

3G1 RPM Micro

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1N5809D3A-JQRS.RAD TT Electronics Power and Hybrid / Semelab Limited

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Part Life Cycle Code Contact Manufacturer Active
Ihs Manufacturer RPM MICRO SEMELAB LTD
Reach Compliance Code unknown unknown
ECCN Code EAR99 EAR99
Configuration SINGLE SINGLE
Diode Type RECTIFIER DIODE RECTIFIER DIODE
Forward Voltage-Max (VF) 1.2 V
Non-rep Pk Forward Current-Max 125 A 125 A
Number of Elements 1 1
Number of Phases 1 1
Output Current-Max 3 A 3 A
Rep Pk Reverse Voltage-Max 100 V 100 V
Surface Mount NO YES
Base Number Matches 2 1
Package Description R-CDSO-N2
Pin Count 2
HTS Code 8541.10.00.80
Additional Feature HIGH RELIABILITY
Application ULTRA FAST RECOVERY POWER
Diode Element Material SILICON
JESD-30 Code R-CDSO-N2
JESD-609 Code e4
Number of Terminals 2
Operating Temperature-Max 175 °C
Operating Temperature-Min -65 °C
Package Body Material CERAMIC, METAL-SEALED COFIRED
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Qualification Status Not Qualified
Reverse Recovery Time-Max 0.05 µs
Terminal Finish GOLD
Terminal Form NO LEAD
Terminal Position DUAL

Compare 3G1 with alternatives

Compare 1N5809D3A-JQRS.RAD with alternatives