4N35 vs TLP331BV feature comparison

4N35 Lite-On Semiconductor Corporation

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TLP331BV Toshiba America Electronic Components

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Rohs Code Yes No
Part Life Cycle Code Active Obsolete
Ihs Manufacturer LITE-ON TECHNOLOGY CORP TOSHIBA CORP
Package Description DIP-6 DIP-6
Reach Compliance Code compliant unknown
ECCN Code EAR99
HTS Code 8541.60.00.80 8541.40.80.00
Factory Lead Time 12 Weeks
Samacsys Manufacturer Lite-On
Additional Feature UL RECOGNIZED UL RECOGNIZED
Coll-Emtr Bkdn Voltage-Min 30 V 55 V
Configuration SINGLE SINGLE
Current Transfer Ratio-Min 100%
Current Transfer Ratio-Nom 100% 200%
Dark Current-Max 50 nA 100 nA
Forward Current-Max 0.06 A 0.025 A
Forward Voltage-Max 1.5 V
Isolation Voltage-Max 3550 V 5000 V
JESD-609 Code e3
Mounting Feature THROUGH HOLE MOUNT
Number of Elements 1 1
On-State Current-Max 0.1 A
Operating Temperature-Max 100 °C 75 °C
Operating Temperature-Min -55 °C -25 °C
Optoelectronic Device Type TRANSISTOR OUTPUT OPTOCOUPLER TRANSISTOR OUTPUT OPTOCOUPLER
Power Dissipation-Max 0.35 W
Surface Mount NO
Terminal Finish Tin (Sn)
Base Number Matches 28 11

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