5962-3829411MXA
vs
5962-3829451MZA
feature comparison
| Part Life Cycle Code |
|
Active
|
| Ihs Manufacturer |
|
PYRAMID SEMICONDUCTOR CORP
|
| Part Package Code |
|
DIP
|
| Package Description |
|
DIP, DIP28,.3
|
| Pin Count |
|
28
|
| Reach Compliance Code |
|
compliant
|
| ECCN Code |
|
3A001.A.2.C
|
| HTS Code |
|
8542.32.00.41
|
| Access Time-Max |
|
45 ns
|
| I/O Type |
|
COMMON
|
| JESD-30 Code |
|
R-CDIP-T28
|
| JESD-609 Code |
|
e0
|
| Memory Density |
|
65536 bit
|
| Memory IC Type |
|
OTHER SRAM
|
| Memory Width |
|
8
|
| Number of Functions |
|
1
|
| Number of Terminals |
|
28
|
| Number of Words |
|
8192 words
|
| Number of Words Code |
|
8000
|
| Operating Mode |
|
ASYNCHRONOUS
|
| Operating Temperature-Max |
|
125 °C
|
| Operating Temperature-Min |
|
-55 °C
|
| Organization |
|
8KX8
|
| Output Characteristics |
|
3-STATE
|
| Package Body Material |
|
CERAMIC, METAL-SEALED COFIRED
|
| Package Code |
|
DIP
|
| Package Equivalence Code |
|
DIP28,.3
|
| Package Shape |
|
RECTANGULAR
|
| Package Style |
|
IN-LINE
|
| Parallel/Serial |
|
PARALLEL
|
| Qualification Status |
|
Not Qualified
|
| Screening Level |
|
MIL-STD-883
|
| Standby Current-Max |
|
0.0003 A
|
| Standby Voltage-Min |
|
2 V
|
| Supply Current-Max |
|
0.145 mA
|
| Supply Voltage-Max (Vsup) |
|
5.5 V
|
| Supply Voltage-Min (Vsup) |
|
4.5 V
|
| Supply Voltage-Nom (Vsup) |
|
5 V
|
| Surface Mount |
|
NO
|
| Technology |
|
CMOS
|
| Temperature Grade |
|
MILITARY
|
| Terminal Finish |
|
TIN LEAD
|
| Terminal Form |
|
THROUGH-HOLE
|
| Terminal Pitch |
|
2.54 mm
|
| Terminal Position |
|
DUAL
|
| Base Number Matches |
|
1
|
|
|
|
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