5962-8866209NA
vs
U634H256DC35G1
feature comparison
| Part Life Cycle Code |
Transferred
|
Transferred
|
| Ihs Manufacturer |
QP SEMICONDUCTOR INC
|
ZENTRUM MIKROELEKTRONIK DRESDEN AG
|
| Part Package Code |
DIP
|
DIP
|
| Package Description |
DIP,
|
DIP,
|
| Pin Count |
28
|
28
|
| Reach Compliance Code |
unknown
|
compliant
|
| ECCN Code |
3A001.A.2.C
|
EAR99
|
| HTS Code |
8542.32.00.41
|
8542.32.00.41
|
| Access Time-Max |
12 ns
|
35 ns
|
| JESD-30 Code |
R-GDIP-T28
|
R-PDIP-T28
|
| JESD-609 Code |
e0
|
e3
|
| Memory Density |
262144 bit
|
262144 bit
|
| Memory IC Type |
STANDARD SRAM
|
NON-VOLATILE SRAM
|
| Memory Width |
8
|
8
|
| Number of Functions |
1
|
1
|
| Number of Terminals |
28
|
28
|
| Number of Words |
32768 words
|
32768 words
|
| Number of Words Code |
32000
|
32000
|
| Operating Mode |
ASYNCHRONOUS
|
ASYNCHRONOUS
|
| Operating Temperature-Max |
125 °C
|
70 °C
|
| Operating Temperature-Min |
-55 °C
|
|
| Organization |
32KX8
|
32KX8
|
| Package Body Material |
CERAMIC, GLASS-SEALED
|
PLASTIC/EPOXY
|
| Package Code |
DIP
|
DIP
|
| Package Shape |
RECTANGULAR
|
RECTANGULAR
|
| Package Style |
IN-LINE
|
IN-LINE
|
| Parallel/Serial |
PARALLEL
|
PARALLEL
|
| Qualification Status |
Not Qualified
|
Not Qualified
|
| Screening Level |
MIL-STD-883
|
|
| Supply Voltage-Max (Vsup) |
5.5 V
|
5.5 V
|
| Supply Voltage-Min (Vsup) |
4.5 V
|
4.5 V
|
| Supply Voltage-Nom (Vsup) |
5 V
|
5 V
|
| Surface Mount |
NO
|
NO
|
| Technology |
CMOS
|
CMOS
|
| Temperature Grade |
MILITARY
|
COMMERCIAL
|
| Terminal Finish |
TIN LEAD
|
MATTE TIN
|
| Terminal Form |
THROUGH-HOLE
|
THROUGH-HOLE
|
| Terminal Position |
DUAL
|
DUAL
|
| Base Number Matches |
1
|
1
|
| Pbfree Code |
|
Yes
|
| Rohs Code |
|
Yes
|
| Length |
|
34.7 mm
|
| Moisture Sensitivity Level |
|
3
|
| Number of Ports |
|
1
|
| Output Characteristics |
|
3-STATE
|
| Output Enable |
|
YES
|
| Seated Height-Max |
|
5.1 mm
|
| Terminal Pitch |
|
2.54 mm
|
| Width |
|
7.62 mm
|
|
|
|
Compare 5962-8866209NA with alternatives
Compare U634H256DC35G1 with alternatives