933978490112 vs BLF248,112 feature comparison

933978490112 NXP Semiconductors

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BLF248,112 NXP Semiconductors

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Pbfree Code Yes
Rohs Code Yes
Part Life Cycle Code Obsolete Obsolete
Ihs Manufacturer NXP SEMICONDUCTORS NXP SEMICONDUCTORS
Package Description CERAMIC, FM-4 SOT-262A1, 4 PIN
Pin Count 4 2
Reach Compliance Code unknown unknown
ECCN Code EAR99 EAR99
Additional Feature HIGH RELIABILITY HIGH RELIABILITY
Case Connection SOURCE SOURCE
Configuration COMMON SOURCE, 2 ELEMENTS COMMON SOURCE, 2 ELEMENTS
DS Breakdown Voltage-Min 65 V 65 V
Drain Current-Max (ID) 25 A 25 A
FET Technology METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR
Highest Frequency Band VERY HIGH FREQUENCY BAND VERY HIGH FREQUENCY BAND
JESD-30 Code R-CDFM-F4 R-CDFM-F4
Number of Elements 2 2
Number of Terminals 4 4
Operating Mode ENHANCEMENT MODE ENHANCEMENT MODE
Operating Temperature-Max 200 °C
Package Body Material CERAMIC, METAL-SEALED COFIRED CERAMIC, METAL-SEALED COFIRED
Package Shape RECTANGULAR RECTANGULAR
Package Style FLANGE MOUNT FLANGE MOUNT
Peak Reflow Temperature (Cel) NOT SPECIFIED NOT SPECIFIED
Polarity/Channel Type N-CHANNEL N-CHANNEL
Qualification Status Not Qualified Not Qualified
Surface Mount YES YES
Terminal Form FLAT FLAT
Terminal Position DUAL DUAL
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED NOT SPECIFIED
Transistor Application AMPLIFIER AMPLIFIER
Transistor Element Material SILICON SILICON
Base Number Matches 1 1
Part Package Code DFM
Manufacturer Package Code SOT262A1
HTS Code 8541.29.00.75
Drain-source On Resistance-Max 0.15 Ω
Power Dissipation Ambient-Max 500 W
Power Dissipation-Max (Abs) 500 W
Power Gain-Min (Gp) 10 dB

Compare 933978490112 with alternatives

Compare BLF248,112 with alternatives