APT35GN120SG vs IGB15N60TATMA1 feature comparison

APT35GN120SG Microsemi Corporation

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IGB15N60TATMA1 Infineon Technologies AG

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Pbfree Code No No
Rohs Code Yes Yes
Part Life Cycle Code Transferred Active
Ihs Manufacturer MICROSEMI CORP INFINEON TECHNOLOGIES AG
Reach Compliance Code compliant not_compliant
ECCN Code EAR99 EAR99
Collector Current-Max (IC) 94 A 30 A
Collector-Emitter Voltage-Max 1200 V 600 V
Gate-Emitter Thr Voltage-Max 6.5 V
Gate-Emitter Voltage-Max 30 V
Operating Temperature-Max 150 °C 175 °C
Polarity/Channel Type N-CHANNEL N-CHANNEL
Power Dissipation-Max (Abs) 379 W
Surface Mount YES YES
Base Number Matches 2 1
Part Package Code D2PAK
Package Description SMALL OUTLINE, R-PSSO-G2
Pin Count 4
Factory Lead Time 19 Weeks
Samacsys Manufacturer Infineon
Case Connection COLLECTOR
Configuration SINGLE
JEDEC-95 Code TO-263AB
JESD-30 Code R-PSSO-G2
JESD-609 Code e3
Moisture Sensitivity Level 1
Number of Elements 1
Number of Terminals 2
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Peak Reflow Temperature (Cel) NOT SPECIFIED
Qualification Status Not Qualified
Terminal Finish Tin (Sn)
Terminal Form GULL WING
Terminal Position SINGLE
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Transistor Application POWER CONTROL
Transistor Element Material SILICON
Turn-off Time-Nom (toff) 291 ns
Turn-on Time-Nom (ton) 32 ns

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