ATF-25570
vs
ATF-25100-GP1
feature comparison
| Rohs Code |
No
|
|
| Part Life Cycle Code |
Obsolete
|
Obsolete
|
| Ihs Manufacturer |
HEWLETT PACKARD CO
|
HEWLETT PACKARD CO
|
| Package Description |
MICROWAVE, S-CQMW-F4
|
UNCASED CHIP, R-XUUC-N5
|
| Reach Compliance Code |
unknown
|
unknown
|
| ECCN Code |
EAR99
|
EAR99
|
| HTS Code |
8541.21.00.75
|
8541.21.00.40
|
| Configuration |
SINGLE
|
SINGLE
|
| DS Breakdown Voltage-Min |
7 V
|
7 V
|
| Drain Current-Max (ID) |
0.15 A
|
0.15 A
|
| FET Technology |
METAL SEMICONDUCTOR
|
METAL SEMICONDUCTOR
|
| Highest Frequency Band |
X BAND
|
X BAND
|
| JESD-30 Code |
S-CQMW-F4
|
R-XUUC-N5
|
| JESD-609 Code |
e0
|
|
| Number of Elements |
1
|
1
|
| Number of Terminals |
4
|
5
|
| Operating Mode |
DEPLETION MODE
|
DEPLETION MODE
|
| Operating Temperature-Max |
175 °C
|
175 °C
|
| Package Body Material |
CERAMIC, METAL-SEALED COFIRED
|
UNSPECIFIED
|
| Package Shape |
SQUARE
|
RECTANGULAR
|
| Package Style |
MICROWAVE
|
UNCASED CHIP
|
| Polarity/Channel Type |
N-CHANNEL
|
N-CHANNEL
|
| Power Dissipation Ambient-Max |
0.45 W
|
0.45 W
|
| Power Gain-Min (Gp) |
13 dB
|
13 dB
|
| Qualification Status |
Not Qualified
|
Not Qualified
|
| Surface Mount |
YES
|
YES
|
| Terminal Finish |
Tin/Lead (Sn/Pb)
|
|
| Terminal Form |
FLAT
|
NO LEAD
|
| Terminal Position |
QUAD
|
UPPER
|
| Transistor Application |
AMPLIFIER
|
AMPLIFIER
|
| Transistor Element Material |
GALLIUM ARSENIDE
|
GALLIUM ARSENIDE
|
| Base Number Matches |
1
|
1
|
| Additional Feature |
|
LOW NOISE
|
|
|
|
Compare ATF-25570 with alternatives
Compare ATF-25100-GP1 with alternatives