AUIRFR4104TRL vs SIS488DN-T1-GE3 feature comparison

AUIRFR4104TRL Infineon Technologies AG

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SIS488DN-T1-GE3 Vishay Intertechnologies

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Rohs Code Yes Yes
Part Life Cycle Code Obsolete Active
Ihs Manufacturer INFINEON TECHNOLOGIES AG VISHAY INTERTECHNOLOGY INC
Package Description DPAK-3 HALOGEN FREE AND ROHS COMPLIANT, LEADLESS, 1212-8, POWERPAK-8
Reach Compliance Code compliant unknown
ECCN Code EAR99 EAR99
Factory Lead Time 12 Weeks 38 Weeks
Samacsys Manufacturer Infineon Vishay
Additional Feature AVALANCHE RATED, HIGH RELIABILITY, ULTRA-LOW RESISTANCE
Avalanche Energy Rating (Eas) 310 mJ 20 mJ
Case Connection DRAIN DRAIN
Configuration SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 40 V 40 V
Drain Current-Max (ID) 42 A 40 A
Drain-source On Resistance-Max 0.0055 Ω 0.0055 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code TO-252AA
JESD-30 Code R-PSSO-G2 S-PDSO-C5
Number of Elements 1 1
Number of Terminals 2 5
Operating Mode ENHANCEMENT MODE ENHANCEMENT MODE
Operating Temperature-Max 175 °C
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape RECTANGULAR SQUARE
Package Style SMALL OUTLINE SMALL OUTLINE
Polarity/Channel Type N-CHANNEL N-CHANNEL
Power Dissipation-Max (Abs) 140 W
Pulsed Drain Current-Max (IDM) 480 A 100 A
Qualification Status Not Qualified
Surface Mount YES YES
Terminal Form GULL WING C BEND
Terminal Position SINGLE DUAL
Transistor Application SWITCHING SWITCHING
Transistor Element Material SILICON SILICON
Base Number Matches 1 1
Peak Reflow Temperature (Cel) NOT SPECIFIED
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED

Compare AUIRFR4104TRL with alternatives

Compare SIS488DN-T1-GE3 with alternatives