B350B-G
vs
RS3AHV6G
feature comparison
| Rohs Code |
Yes
|
Yes
|
| Part Life Cycle Code |
Contact Manufacturer
|
Obsolete
|
| Ihs Manufacturer |
WEITRON TECHNOLOGY CO LTD
|
TAIWAN SEMICONDUCTOR CO LTD
|
| Reach Compliance Code |
unknown
|
compliant
|
| ECCN Code |
EAR99
|
EAR99
|
| Configuration |
SINGLE
|
SINGLE
|
| Diode Type |
RECTIFIER DIODE
|
RECTIFIER DIODE
|
| Forward Voltage-Max (VF) |
0.7 V
|
1.3 V
|
| Non-rep Pk Forward Current-Max |
100 A
|
100 A
|
| Number of Elements |
1
|
1
|
| Number of Phases |
1
|
1
|
| Operating Temperature-Max |
125 °C
|
150 °C
|
| Output Current-Max |
3 A
|
3 A
|
| Rep Pk Reverse Voltage-Max |
50 V
|
50 V
|
| Surface Mount |
YES
|
YES
|
| Technology |
SCHOTTKY
|
|
| Base Number Matches |
1
|
1
|
| Package Description |
|
SMC, 2 PIN
|
| HTS Code |
|
8541.10.00.80
|
| Application |
|
HIGH FORWARD SURGE CURRENT CAPABILITY
|
| Breakdown Voltage-Min |
|
50 V
|
| Diode Element Material |
|
SILICON
|
| JEDEC-95 Code |
|
DO-214AB
|
| JESD-30 Code |
|
R-PDSO-C2
|
| JESD-609 Code |
|
e3
|
| Moisture Sensitivity Level |
|
1
|
| Number of Terminals |
|
2
|
| Operating Temperature-Min |
|
-55 °C
|
| Package Body Material |
|
PLASTIC/EPOXY
|
| Package Shape |
|
RECTANGULAR
|
| Package Style |
|
SMALL OUTLINE
|
| Peak Reflow Temperature (Cel) |
|
250
|
| Reference Standard |
|
AEC-Q101
|
| Reverse Current-Max |
|
10 µA
|
| Reverse Recovery Time-Max |
|
0.15 µs
|
| Reverse Test Voltage |
|
35 V
|
| Terminal Finish |
|
MATTE TIN
|
| Terminal Form |
|
C BEND
|
| Terminal Position |
|
DUAL
|
| Time@Peak Reflow Temperature-Max (s) |
|
30
|
|
|
|
Compare B350B-G with alternatives
Compare RS3AHV6G with alternatives