BAS116,235 vs BAS116_R2_00001 feature comparison

BAS116,235 NXP Semiconductors

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BAS116_R2_00001 PanJit Semiconductor

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Rohs Code Yes Yes
Part Life Cycle Code Transferred Active
Ihs Manufacturer NXP SEMICONDUCTORS PAN JIT INTERNATIONAL INC
Part Package Code TO-236
Package Description PLASTIC PACKAGE-3 GREEN, PLASTIC PACKAGE-3
Pin Count 3
Manufacturer Package Code SOT23
Reach Compliance Code compliant compliant
ECCN Code EAR99 EAR99
HTS Code 8541.10.00.70 8541.10.00.70
Additional Feature LOW LEAKAGE CURRENT
Configuration SINGLE SINGLE
Diode Element Material SILICON SILICON
Diode Type RECTIFIER DIODE RECTIFIER DIODE
Forward Voltage-Max (VF) 0.9 V 0.9 V
JEDEC-95 Code TO-236AB
JESD-30 Code R-PDSO-G3 R-PDSO-G3
JESD-609 Code e3 e3
Moisture Sensitivity Level 1
Non-rep Pk Forward Current-Max 4.5 A 4 A
Number of Elements 1 1
Number of Phases 1 1
Number of Terminals 3 3
Operating Temperature-Max 150 °C 150 °C
Output Current-Max 0.215 A 0.2 A
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape RECTANGULAR RECTANGULAR
Package Style SMALL OUTLINE SMALL OUTLINE
Peak Reflow Temperature (Cel) 260
Power Dissipation-Max 0.25 W 0.25 W
Qualification Status Not Qualified
Rep Pk Reverse Voltage-Max 85 V 100 V
Reverse Recovery Time-Max 3 µs 3 µs
Surface Mount YES YES
Terminal Finish TIN TIN
Terminal Form GULL WING GULL WING
Terminal Position DUAL DUAL
Time@Peak Reflow Temperature-Max (s) 30
Base Number Matches 2 1
Operating Temperature-Min -55 °C

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Compare BAS116_R2_00001 with alternatives