BAS116LT1
vs
MMBD6050-H
feature comparison
| Rohs Code |
No
|
|
| Part Life Cycle Code |
Obsolete
|
Active
|
| Ihs Manufacturer |
MOTOROLA SEMICONDUCTOR PRODUCTS
|
FORMOSA MICROSEMI CO LTD
|
| Reach Compliance Code |
unknown
|
unknown
|
| Configuration |
SINGLE
|
SINGLE
|
| Diode Type |
RECTIFIER DIODE
|
RECTIFIER DIODE
|
| Forward Voltage-Max (VF) |
1.3 V
|
1.1 V
|
| JESD-609 Code |
e0
|
|
| Non-rep Pk Forward Current-Max |
0.5 A
|
0.5 A
|
| Number of Elements |
1
|
1
|
| Operating Temperature-Max |
150 °C
|
150 °C
|
| Output Current-Max |
0.2 A
|
0.2 A
|
| Rep Pk Reverse Voltage-Max |
75 V
|
70 V
|
| Reverse Recovery Time-Max |
3 µs
|
0.004 µs
|
| Surface Mount |
YES
|
YES
|
| Terminal Finish |
Tin/Lead (Sn/Pb)
|
|
| Base Number Matches |
8
|
1
|
| Package Description |
|
R-PDSO-G3
|
| ECCN Code |
|
EAR99
|
| HTS Code |
|
8541.10.00.70
|
| Application |
|
GENERAL PURPOSE
|
| Breakdown Voltage-Min |
|
70 V
|
| Diode Element Material |
|
SILICON
|
| JESD-30 Code |
|
R-PDSO-G3
|
| Number of Phases |
|
1
|
| Number of Terminals |
|
3
|
| Operating Temperature-Min |
|
-55 °C
|
| Package Body Material |
|
PLASTIC/EPOXY
|
| Package Shape |
|
RECTANGULAR
|
| Package Style |
|
SMALL OUTLINE
|
| Power Dissipation-Max |
|
0.225 W
|
| Reverse Current-Max |
|
0.1 µA
|
| Reverse Test Voltage |
|
50 V
|
| Terminal Form |
|
GULL WING
|
| Terminal Position |
|
DUAL
|
|
|
|
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