BAS16-T
vs
1N4446
feature comparison
| Pbfree Code |
Yes
|
|
| Rohs Code |
Yes
|
No
|
| Part Life Cycle Code |
Lifetime Buy
|
Obsolete
|
| Ihs Manufacturer |
NXP SEMICONDUCTORS
|
INTERNATIONAL SEMICONDUCTOR INC
|
| Package Description |
R-PDSO-G3
|
|
| Reach Compliance Code |
compliant
|
unknown
|
| Configuration |
SINGLE
|
SINGLE
|
| Diode Element Material |
SILICON
|
SILICON
|
| Diode Type |
RECTIFIER DIODE
|
RECTIFIER DIODE
|
| Forward Voltage-Max (VF) |
1.25 V
|
1 V
|
| JEDEC-95 Code |
TO-236AB
|
DO-35
|
| JESD-30 Code |
R-PDSO-G3
|
O-LALF-W2
|
| JESD-609 Code |
e3
|
e0
|
| Moisture Sensitivity Level |
NOT APPLICABLE
|
|
| Non-rep Pk Forward Current-Max |
4 A
|
2 A
|
| Number of Elements |
1
|
1
|
| Number of Terminals |
3
|
2
|
| Operating Temperature-Max |
150 °C
|
200 °C
|
| Operating Temperature-Min |
-65 °C
|
|
| Output Current-Max |
0.215 A
|
0.15 A
|
| Package Body Material |
PLASTIC/EPOXY
|
GLASS
|
| Package Shape |
RECTANGULAR
|
ROUND
|
| Package Style |
SMALL OUTLINE
|
LONG FORM
|
| Peak Reflow Temperature (Cel) |
260
|
|
| Power Dissipation-Max |
0.25 W
|
0.5 W
|
| Qualification Status |
Not Qualified
|
Not Qualified
|
| Rep Pk Reverse Voltage-Max |
85 V
|
100 V
|
| Reverse Current-Max |
1 µA
|
|
| Reverse Recovery Time-Max |
0.004 µs
|
0.004 µs
|
| Surface Mount |
YES
|
NO
|
| Terminal Finish |
TIN
|
TIN LEAD
|
| Terminal Form |
GULL WING
|
WIRE
|
| Terminal Position |
DUAL
|
AXIAL
|
| Time@Peak Reflow Temperature-Max (s) |
40
|
|
| Base Number Matches |
2
|
37
|
| ECCN Code |
|
EAR99
|
| HTS Code |
|
8541.10.00.70
|
| Case Connection |
|
ISOLATED
|
| Number of Phases |
|
1
|
|
|
|
Compare BAS16-T with alternatives
Compare 1N4446 with alternatives