BAS16GWJ
vs
BAV19W-GT1
feature comparison
| Part Life Cycle Code |
Active
|
Transferred
|
| Ihs Manufacturer |
NEXPERIA
|
SENSITRON SEMICONDUCTOR
|
| Manufacturer Package Code |
SOD123
|
|
| Reach Compliance Code |
compliant
|
compliant
|
| Factory Lead Time |
4 Weeks
|
|
| Samacsys Manufacturer |
Nexperia
|
|
| Additional Feature |
LOW LEAKAGE CURRENT
|
|
| Application |
GENERAL PURPOSE
|
GENERAL PURPOSE
|
| Breakdown Voltage-Min |
100 V
|
|
| Configuration |
SINGLE
|
SINGLE
|
| Diode Element Material |
SILICON
|
SILICON
|
| Diode Type |
RECTIFIER DIODE
|
RECTIFIER DIODE
|
| Forward Voltage-Max (VF) |
1.25 V
|
|
| JESD-30 Code |
R-PDSO-G2
|
R-PDSO-G2
|
| JESD-609 Code |
e3
|
|
| Moisture Sensitivity Level |
1
|
1
|
| Non-rep Pk Forward Current-Max |
1 A
|
|
| Number of Elements |
1
|
1
|
| Number of Phases |
1
|
1
|
| Number of Terminals |
2
|
2
|
| Operating Temperature-Max |
150 °C
|
150 °C
|
| Operating Temperature-Min |
-55 °C
|
-65 °C
|
| Output Current-Max |
0.215 A
|
0.2 A
|
| Package Body Material |
PLASTIC/EPOXY
|
PLASTIC/EPOXY
|
| Package Shape |
RECTANGULAR
|
RECTANGULAR
|
| Package Style |
SMALL OUTLINE
|
SMALL OUTLINE
|
| Peak Reflow Temperature (Cel) |
260
|
|
| Power Dissipation-Max |
0.357 W
|
0.41 W
|
| Reference Standard |
AEC-Q101; IEC-60134
|
|
| Rep Pk Reverse Voltage-Max |
100 V
|
100 V
|
| Reverse Current-Max |
0.5 µA
|
|
| Reverse Recovery Time-Max |
0.004 µs
|
0.05 µs
|
| Reverse Test Voltage |
80 V
|
|
| Surface Mount |
YES
|
YES
|
| Terminal Finish |
TIN
|
|
| Terminal Form |
GULL WING
|
GULL WING
|
| Terminal Position |
DUAL
|
DUAL
|
| Time@Peak Reflow Temperature-Max (s) |
30
|
|
| Base Number Matches |
1
|
2
|
| Pbfree Code |
|
Yes
|
| Rohs Code |
|
Yes
|
| Package Description |
|
R-PDSO-G2
|
| Pin Count |
|
2
|
| ECCN Code |
|
EAR99
|
| HTS Code |
|
8541.10.00.70
|
| Qualification Status |
|
Not Qualified
|
|
|
|
Compare BAS16GWJ with alternatives
Compare BAV19W-GT1 with alternatives