BAS16WV-T vs LBAS516T1G feature comparison

BAS16WV-T Rectron Semiconductor

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LBAS516T1G LRC Leshan Radio Co Ltd

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Part Life Cycle Code Active Active
Ihs Manufacturer RECTRON LTD LESHAN RADIO CO LTD
Reach Compliance Code compliant unknown
ECCN Code EAR99 EAR99
HTS Code 8541.10.00.70 8541.10.00.70
Date Of Intro 2018-11-27
Application FAST RECOVERY GENERAL PURPOSE
Configuration SINGLE SINGLE
Diode Element Material SILICON SILICON
Diode Type RECTIFIER DIODE RECTIFIER DIODE
Forward Voltage-Max (VF) 1.25 V 1.25 V
JESD-30 Code R-PDSO-G2 R-PDSO-F2
Non-rep Pk Forward Current-Max 0.5 A 0.5 A
Number of Elements 1 1
Number of Phases 1 1
Number of Terminals 2 2
Operating Temperature-Max 150 °C 150 °C
Output Current-Max 0.25 A 0.25 A
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape RECTANGULAR RECTANGULAR
Package Style SMALL OUTLINE SMALL OUTLINE
Power Dissipation-Max 0.35 W 0.5 W
Reference Standard AEC-Q101 IEC-134
Rep Pk Reverse Voltage-Max 100 V 85 V
Reverse Current-Max 1 µA 0.5 µA
Reverse Recovery Time-Max 0.006 µs 0.004 µs
Reverse Test Voltage 75 V 80 V
Surface Mount YES YES
Terminal Form GULL WING FLAT
Terminal Position DUAL DUAL
Base Number Matches 1 1
Rohs Code Yes
Package Description R-PDSO-F2
JESD-609 Code e3
Moisture Sensitivity Level 1
Peak Reflow Temperature (Cel) NOT SPECIFIED
Terminal Finish Matte Tin (Sn)
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED

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