BAS19-E3-18 vs BAV19WSG feature comparison

BAS19-E3-18 Vishay Intertechnologies

Buy Now Datasheet

BAV19WSG Galaxy Microelectronics

Buy Now Datasheet
Pbfree Code Yes
Rohs Code Yes
Part Life Cycle Code Active Active
Ihs Manufacturer VISHAY INTERTECHNOLOGY INC CHANGZHOU GALAXY CENTURY MICROELECTRONICS CO LTD
Package Description ROHS COMPLIANT PACKAGE-3
Pin Count 3
Reach Compliance Code compliant unknown
ECCN Code EAR99 EAR99
HTS Code 8541.10.00.70
Factory Lead Time 12 Weeks
Samacsys Manufacturer Vishay
Application FAST RECOVERY FAST RECOVERY
Configuration SINGLE SINGLE
Diode Element Material SILICON SILICON
Diode Type RECTIFIER DIODE RECTIFIER DIODE
Forward Voltage-Max (VF) 1.25 V 1.25 V
JESD-30 Code R-PDSO-G3 R-PDSO-G2
JESD-609 Code e3
Moisture Sensitivity Level 1
Non-rep Pk Forward Current-Max 2.5 A 0.5 A
Number of Elements 1 1
Number of Phases 1 1
Number of Terminals 3 2
Operating Temperature-Max 150 °C 150 °C
Operating Temperature-Min -55 °C -65 °C
Output Current-Max 0.25 A 0.2 A
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape RECTANGULAR RECTANGULAR
Package Style SMALL OUTLINE SMALL OUTLINE
Power Dissipation-Max 0.5 W 0.2 W
Rep Pk Reverse Voltage-Max 120 V 120 V
Reverse Current-Max 0.1 µA 0.1 µA
Reverse Recovery Time-Max 0.05 µs 0.05 µs
Reverse Test Voltage 100 V 100 V
Surface Mount YES YES
Terminal Finish MATTE TIN
Terminal Form GULL WING GULL WING
Terminal Position DUAL DUAL
Base Number Matches 1 2
Breakdown Voltage-Min 120 V

Compare BAS19-E3-18 with alternatives

Compare BAV19WSG with alternatives