BAS21 vs BAS21212 feature comparison

BAS21 EIC Semiconductor Inc

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BAS21212 NXP Semiconductors

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Pbfree Code Yes
Rohs Code Yes
Part Life Cycle Code Obsolete Obsolete
Ihs Manufacturer EIC SEMICONDUCTOR CO LTD NXP SEMICONDUCTORS
Reach Compliance Code compliant unknown
ECCN Code EAR99 EAR99
HTS Code 8541.10.00.70 8541.10.00.70
Configuration SINGLE SINGLE
Diode Element Material SILICON SILICON
Diode Type RECTIFIER DIODE RECTIFIER DIODE
JESD-30 Code R-PDSO-G3 R-PDSO-G3
Number of Elements 1 1
Number of Phases 1 1
Number of Terminals 3 3
Operating Temperature-Max 150 °C 150 °C
Output Current-Max 0.2 A 0.2 A
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape RECTANGULAR RECTANGULAR
Package Style SMALL OUTLINE SMALL OUTLINE
Power Dissipation-Max 0.25 W 0.25 W
Rep Pk Reverse Voltage-Max 250 V 250 V
Reverse Recovery Time-Max 0.05 µs 0.05 µs
Surface Mount YES YES
Terminal Form GULL WING GULL WING
Terminal Position DUAL DUAL
Base Number Matches 2 1
Package Description R-PDSO-G3
Forward Voltage-Max (VF) 1.25 V
Non-rep Pk Forward Current-Max 9 A
Qualification Status Not Qualified
Reverse Current-Max 0.1 µA

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