BAS21 vs BAS21212 feature comparison

BAS21 STMicroelectronics

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BAS21212 NXP Semiconductors

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Rohs Code No
Part Life Cycle Code Active Obsolete
Ihs Manufacturer STMICROELECTRONICS NXP SEMICONDUCTORS
Reach Compliance Code not_compliant unknown
ECCN Code EAR99 EAR99
HTS Code 8541.10.00.70 8541.10.00.70
Configuration SINGLE SINGLE
Diode Element Material SILICON SILICON
Diode Type RECTIFIER DIODE RECTIFIER DIODE
Forward Voltage-Max (VF) 1 V 1.25 V
JESD-30 Code R-PDSO-G3 R-PDSO-G3
JESD-609 Code e0
Number of Elements 1 1
Number of Phases 1 1
Number of Terminals 3 3
Operating Temperature-Max 175 °C 150 °C
Output Current-Max 0.2 A 0.2 A
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape RECTANGULAR RECTANGULAR
Package Style SMALL OUTLINE SMALL OUTLINE
Rep Pk Reverse Voltage-Max 200 V 250 V
Reverse Recovery Time-Max 0.05 µs 0.05 µs
Surface Mount YES YES
Terminal Finish TIN LEAD
Terminal Form GULL WING GULL WING
Terminal Position DUAL DUAL
Base Number Matches 1 1
Package Description R-PDSO-G3
Non-rep Pk Forward Current-Max 9 A
Power Dissipation-Max 0.25 W
Qualification Status Not Qualified
Reverse Current-Max 0.1 µA

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