BAS21 vs BAS21VD,165 feature comparison

BAS21 Sangdest Microelectronics (Nanjing) Co Ltd

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BAS21VD,165 NXP Semiconductors

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Rohs Code Yes Yes
Part Life Cycle Code Active Transferred
Ihs Manufacturer SANGDEST MICROELECTRONICS (NANJING) CO LTD NXP SEMICONDUCTORS
Package Description PLASTIC PACKAGE-3 R-PDSO-G6
Reach Compliance Code compliant compliant
Configuration SINGLE SEPARATE, 3 ELEMENTS
Diode Element Material SILICON SILICON
Diode Type RECTIFIER DIODE RECTIFIER DIODE
JESD-30 Code R-PDSO-G3 R-PDSO-G6
Number of Elements 1 3
Number of Phases 1
Number of Terminals 3 6
Output Current-Max 0.2 A 0.2 A
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape RECTANGULAR RECTANGULAR
Package Style SMALL OUTLINE SMALL OUTLINE
Peak Reflow Temperature (Cel) NOT SPECIFIED 260
Power Dissipation-Max 0.35 W 0.25 W
Qualification Status Not Qualified Not Qualified
Rep Pk Reverse Voltage-Max 200 V 250 V
Reverse Recovery Time-Max 0.05 µs 0.05 µs
Surface Mount YES YES
Terminal Form GULL WING GULL WING
Terminal Position DUAL DUAL
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED 30
Base Number Matches 58 2
Part Package Code TSOP
Pin Count 6
Manufacturer Package Code SOT457
ECCN Code EAR99
HTS Code 8541.10.00.70
Forward Voltage-Max (VF) 1 V
JESD-609 Code e3
Moisture Sensitivity Level 1
Operating Temperature-Max 150 °C
Operating Temperature-Min -65 °C
Reverse Current-Max 100 µA
Reverse Test Voltage 200 V
Terminal Finish TIN

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Compare BAS21VD,165 with alternatives