BAS216,115
vs
BAS21-E3-08
feature comparison
| Rohs Code |
Yes
|
Yes
|
| Part Life Cycle Code |
Obsolete
|
Active
|
| Ihs Manufacturer |
NXP SEMICONDUCTORS
|
VISHAY INTERTECHNOLOGY INC
|
| Package Description |
CERAMIC PACKAGE-2
|
ROHS COMPLIANT PACKAGE-3
|
| Pin Count |
2
|
3
|
| Reach Compliance Code |
unknown
|
compliant
|
| ECCN Code |
EAR99
|
EAR99
|
| HTS Code |
8541.10.00.70
|
8541.10.00.70
|
| Samacsys Manufacturer |
NXP
|
Vishay
|
| Configuration |
SINGLE
|
COMMON CATHODE, 2 ELEMENTS
|
| Diode Element Material |
SILICON
|
SILICON
|
| Diode Type |
RECTIFIER DIODE
|
RECTIFIER DIODE
|
| Forward Voltage-Max (VF) |
1.25 V
|
1.25 V
|
| JESD-30 Code |
R-CDSO-R2
|
R-PDSO-G3
|
| Non-rep Pk Forward Current-Max |
4 A
|
2.5 A
|
| Number of Elements |
1
|
2
|
| Number of Phases |
1
|
1
|
| Number of Terminals |
2
|
3
|
| Operating Temperature-Max |
150 °C
|
150 °C
|
| Output Current-Max |
0.25 A
|
0.25 A
|
| Package Body Material |
CERAMIC, METAL-SEALED COFIRED
|
PLASTIC/EPOXY
|
| Package Shape |
RECTANGULAR
|
RECTANGULAR
|
| Package Style |
SMALL OUTLINE
|
SMALL OUTLINE
|
| Peak Reflow Temperature (Cel) |
260
|
260
|
| Power Dissipation-Max |
0.4 W
|
0.5 W
|
| Qualification Status |
Not Qualified
|
|
| Rep Pk Reverse Voltage-Max |
85 V
|
250 V
|
| Reverse Current-Max |
1 µA
|
0.1 µA
|
| Reverse Recovery Time-Max |
0.004 µs
|
0.05 µs
|
| Surface Mount |
YES
|
YES
|
| Terminal Form |
WRAP AROUND
|
GULL WING
|
| Terminal Position |
DUAL
|
DUAL
|
| Time@Peak Reflow Temperature-Max (s) |
40
|
10
|
| Base Number Matches |
1
|
1
|
| Pbfree Code |
|
Yes
|
| Factory Lead Time |
|
12 Weeks
|
| Application |
|
FAST RECOVERY
|
| JESD-609 Code |
|
e3
|
| Moisture Sensitivity Level |
|
1
|
| Operating Temperature-Min |
|
-55 °C
|
| Reverse Test Voltage |
|
200 V
|
| Terminal Finish |
|
Matte Tin (Sn)
|
|
|
|
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