BAS216,135 vs BAV303-13 feature comparison

BAS216,135 NXP Semiconductors

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BAV303-13 Diodes Incorporated

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Rohs Code Yes
Part Life Cycle Code Obsolete Obsolete
Ihs Manufacturer NXP SEMICONDUCTORS DIODES INC
Package Description R-CDSO-R2 O-LELF-R2
Pin Count 2 2
Reach Compliance Code unknown unknown
ECCN Code EAR99 EAR99
HTS Code 8541.10.00.70 8541.10.00.70
Samacsys Manufacturer NXP
Configuration SINGLE SINGLE
Diode Element Material SILICON SILICON
Diode Type RECTIFIER DIODE RECTIFIER DIODE
Forward Voltage-Max (VF) 1.25 V
JESD-30 Code R-CDSO-R2 O-LELF-R2
Non-rep Pk Forward Current-Max 4 A
Number of Elements 1 1
Number of Phases 1 1
Number of Terminals 2 2
Operating Temperature-Max 150 °C 175 °C
Output Current-Max 0.25 A 0.125 A
Package Body Material CERAMIC, METAL-SEALED COFIRED GLASS
Package Shape RECTANGULAR ROUND
Package Style SMALL OUTLINE LONG FORM
Peak Reflow Temperature (Cel) NOT SPECIFIED
Power Dissipation-Max 0.4 W 0.5 W
Qualification Status Not Qualified Not Qualified
Rep Pk Reverse Voltage-Max 85 V 250 V
Reverse Current-Max 1 µA
Reverse Recovery Time-Max 0.004 µs 0.05 µs
Surface Mount YES YES
Terminal Form WRAP AROUND WRAP AROUND
Terminal Position DUAL END
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Base Number Matches 1 1
Part Package Code MELF
Case Connection ISOLATED
Operating Temperature-Min -65 °C

Compare BAS216,135 with alternatives

Compare BAV303-13 with alternatives