BAS21E6327HTSA1 vs BAV303-13 feature comparison

BAS21E6327HTSA1 Infineon Technologies AG

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BAV303-13 Diodes Incorporated

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Pbfree Code Yes
Rohs Code Yes
Part Life Cycle Code End Of Life Obsolete
Ihs Manufacturer INFINEON TECHNOLOGIES AG DIODES INC
Part Package Code SOT-23 MELF
Package Description R-PDSO-G3 O-LELF-R2
Pin Count 3 2
Reach Compliance Code compliant unknown
ECCN Code EAR99 EAR99
HTS Code 8541.10.00.70 8541.10.00.70
Factory Lead Time 4 Weeks
Samacsys Manufacturer Infineon
Breakdown Voltage-Min 250 V
Configuration SINGLE SINGLE
Diode Element Material SILICON SILICON
Diode Type RECTIFIER DIODE RECTIFIER DIODE
Forward Voltage-Max (VF) 1.25 V
JESD-30 Code R-PDSO-G3 O-LELF-R2
JESD-609 Code e3
Moisture Sensitivity Level 1
Non-rep Pk Forward Current-Max 4 A
Number of Elements 1 1
Number of Phases 1 1
Number of Terminals 3 2
Operating Temperature-Max 150 °C 175 °C
Output Current-Max 0.25 A 0.125 A
Package Body Material PLASTIC/EPOXY GLASS
Package Shape RECTANGULAR ROUND
Package Style SMALL OUTLINE LONG FORM
Peak Reflow Temperature (Cel) NOT SPECIFIED
Power Dissipation-Max 0.35 W 0.5 W
Qualification Status Not Qualified Not Qualified
Rep Pk Reverse Voltage-Max 200 V 250 V
Reverse Recovery Time-Max 0.05 µs 0.05 µs
Surface Mount YES YES
Terminal Finish Tin (Sn)
Terminal Form GULL WING WRAP AROUND
Terminal Position DUAL END
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Base Number Matches 1 1
Case Connection ISOLATED
Operating Temperature-Min -65 °C

Compare BAS21E6327HTSA1 with alternatives

Compare BAV303-13 with alternatives