BAS316,115
vs
CMDD4448TR
feature comparison
| Rohs Code |
Yes
|
No
|
| Part Life Cycle Code |
Transferred
|
Active
|
| Ihs Manufacturer |
NXP SEMICONDUCTORS
|
CENTRAL SEMICONDUCTOR CORP
|
| Part Package Code |
SOD
|
|
| Pin Count |
2
|
2
|
| Manufacturer Package Code |
SOD323
|
|
| Reach Compliance Code |
compliant
|
not_compliant
|
| ECCN Code |
EAR99
|
EAR99
|
| HTS Code |
8541.10.00.70
|
8541.10.00.70
|
| Configuration |
SINGLE
|
SINGLE
|
| Diode Element Material |
SILICON
|
SILICON
|
| Diode Type |
RECTIFIER DIODE
|
RECTIFIER DIODE
|
| Forward Voltage-Max (VF) |
1.25 V
|
0.72 V
|
| JESD-30 Code |
R-PDSO-G2
|
R-PDSO-G2
|
| JESD-609 Code |
e3
|
e0
|
| Moisture Sensitivity Level |
1
|
|
| Non-rep Pk Forward Current-Max |
4 A
|
4 A
|
| Number of Elements |
1
|
1
|
| Number of Phases |
1
|
1
|
| Number of Terminals |
2
|
2
|
| Operating Temperature-Max |
150 °C
|
175 °C
|
| Output Current-Max |
0.25 A
|
0.25 A
|
| Package Body Material |
PLASTIC/EPOXY
|
PLASTIC/EPOXY
|
| Package Shape |
RECTANGULAR
|
RECTANGULAR
|
| Package Style |
SMALL OUTLINE
|
SMALL OUTLINE
|
| Peak Reflow Temperature (Cel) |
260
|
|
| Power Dissipation-Max |
0.4 W
|
0.275 W
|
| Qualification Status |
Not Qualified
|
Not Qualified
|
| Rep Pk Reverse Voltage-Max |
85 V
|
100 V
|
| Reverse Current-Max |
1 µA
|
|
| Reverse Recovery Time-Max |
0.004 µs
|
0.004 µs
|
| Surface Mount |
YES
|
YES
|
| Terminal Finish |
TIN
|
Tin/Lead (Sn/Pb)
|
| Terminal Form |
GULL WING
|
GULL WING
|
| Terminal Position |
DUAL
|
DUAL
|
| Time@Peak Reflow Temperature-Max (s) |
30
|
|
| Base Number Matches |
2
|
1
|
| Package Description |
|
PLASTIC, SUPERMINI-2
|
| Operating Temperature-Min |
|
-65 °C
|
|
|
|
Compare BAS316,115 with alternatives
-
BAS316,115 vs 934054945115
-
BAS316,115 vs BAS316,135
-
BAS316,115 vs 934054945135
-
BAS316,115 vs BAS316
-
BAS316,115 vs BAS316-TP
-
BAS316,115 vs BAS316T/R
-
BAS316,115 vs BAS316-TP-HF
-
BAS316,115 vs BAS316RRG
-
BAS316,115 vs BAS316RR
Compare CMDD4448TR with alternatives