BAS316,235
vs
1N4448W
feature comparison
| Part Life Cycle Code |
Active
|
Contact Manufacturer
|
| Ihs Manufacturer |
NXP SEMICONDUCTORS
|
SILICON STANDARD CORP
|
| Package Description |
R-PDSO-G2
|
|
| Reach Compliance Code |
unknown
|
unknown
|
| ECCN Code |
EAR99
|
EAR99
|
| HTS Code |
8541.10.00.70
|
|
| Configuration |
SINGLE
|
|
| Diode Element Material |
SILICON
|
|
| Diode Type |
RECTIFIER DIODE
|
|
| JESD-30 Code |
R-PDSO-G2
|
|
| Number of Elements |
1
|
|
| Number of Phases |
1
|
|
| Number of Terminals |
2
|
|
| Operating Temperature-Max |
150 °C
|
|
| Output Current-Max |
0.25 A
|
|
| Package Body Material |
PLASTIC/EPOXY
|
|
| Package Shape |
RECTANGULAR
|
|
| Package Style |
SMALL OUTLINE
|
|
| Power Dissipation-Max |
0.4 W
|
|
| Rep Pk Reverse Voltage-Max |
100 V
|
|
| Reverse Recovery Time-Max |
0.004 µs
|
|
| Surface Mount |
YES
|
|
| Terminal Form |
GULL WING
|
|
| Terminal Position |
DUAL
|
|
| Base Number Matches |
1
|
26
|
|
|
|
Compare BAS316,235 with alternatives