BAS316 vs 1SS352(TPH3,F) feature comparison

BAS316 Nexperia

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1SS352(TPH3,F) Toshiba America Electronic Components

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Rohs Code Yes Yes
Part Life Cycle Code Active Active
Ihs Manufacturer NEXPERIA TOSHIBA CORP
Package Description SC-76, SOD-323, 2 PIN R-PDSO-G2
Reach Compliance Code compliant unknown
ECCN Code EAR99 EAR99
HTS Code 8541.10.00.70 8541.10.00.70
Date Of Intro 1997-12-05
Samacsys Manufacturer Nexperia Toshiba
Additional Feature LOW LEAKAGE CURRENT
Application GENERAL PURPOSE FAST RECOVERY
Configuration SINGLE SINGLE
Diode Element Material SILICON SILICON
Diode Type RECTIFIER DIODE RECTIFIER DIODE
Forward Voltage-Max (VF) 1.25 V 1.2 V
JESD-30 Code R-PDSO-G2 R-PDSO-G2
JESD-609 Code e3
Moisture Sensitivity Level 1
Non-rep Pk Forward Current-Max 4 A 1 A
Number of Elements 1 1
Number of Phases 1 1
Number of Terminals 2 2
Operating Temperature-Max 150 °C 125 °C
Operating Temperature-Min -65 °C
Output Current-Max 0.25 A 0.1 A
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape RECTANGULAR RECTANGULAR
Package Style SMALL OUTLINE SMALL OUTLINE
Peak Reflow Temperature (Cel) 260 NOT SPECIFIED
Power Dissipation-Max 0.4 W 0.2 W
Qualification Status Not Qualified
Reference Standard IEC-60134 AEC-Q101
Rep Pk Reverse Voltage-Max 100 V 85 V
Reverse Current-Max 0.5 µA 0.5 µA
Reverse Recovery Time-Max 0.004 µs 0.004 µs
Reverse Test Voltage 80 V 80 V
Surface Mount YES YES
Terminal Finish TIN
Terminal Form GULL WING GULL WING
Terminal Position DUAL DUAL
Time@Peak Reflow Temperature-Max (s) 30 NOT SPECIFIED
Base Number Matches 18 1
Pbfree Code Yes
Pin Count 2

Compare BAS316 with alternatives

Compare 1SS352(TPH3,F) with alternatives