BAS321 vs BAV21WST/R13 feature comparison

BAS321 Galaxy Microelectronics

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BAV21WST/R13 PanJit Semiconductor

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Part Life Cycle Code Active Active
Ihs Manufacturer CHANGZHOU GALAXY CENTURY MICROELECTRONICS CO LTD PAN JIT INTERNATIONAL INC
Package Description SOD-323, 2 PIN R-PDSO-F2
Reach Compliance Code unknown compliant
ECCN Code EAR99
Additional Feature LOW LEAKAGE CURRENT
Application FAST RECOVERY
Breakdown Voltage-Min 250 V
Configuration SINGLE SINGLE
Diode Element Material SILICON SILICON
Diode Type RECTIFIER DIODE RECTIFIER DIODE
Forward Voltage-Max (VF) 1.25 V 1 V
JESD-30 Code R-PDSO-G2 R-PDSO-F2
Non-rep Pk Forward Current-Max 1.7 A 4 A
Number of Elements 1 1
Number of Phases 1
Number of Terminals 2 2
Operating Temperature-Max 150 °C 150 °C
Operating Temperature-Min -65 °C -55 °C
Output Current-Max 0.2 A 0.2 A
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape RECTANGULAR RECTANGULAR
Package Style SMALL OUTLINE SMALL OUTLINE
Power Dissipation-Max 0.3 W 0.2 W
Reference Standard MIL-STD-202
Rep Pk Reverse Voltage-Max 250 V 250 V
Reverse Current-Max 0.1 µA
Reverse Recovery Time-Max 0.05 µs 0.05 µs
Reverse Test Voltage 200 V
Surface Mount YES YES
Terminal Form GULL WING FLAT
Terminal Position DUAL DUAL
Base Number Matches 4 1
Pbfree Code Yes
Rohs Code Yes
Pin Count 2
Peak Reflow Temperature (Cel) NOT SPECIFIED
Qualification Status Not Qualified
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED

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