BAS45A153
vs
BAS45AL,135
feature comparison
| Part Life Cycle Code |
Obsolete
|
Active
|
| Ihs Manufacturer |
NXP SEMICONDUCTORS
|
NEXPERIA
|
| Package Description |
O-LALF-W2
|
O-LELF-R2
|
| Reach Compliance Code |
unknown
|
compliant
|
| ECCN Code |
EAR99
|
EAR99
|
| HTS Code |
8541.10.00.70
|
8541.10.00.70
|
| Application |
GENERAL PURPOSE
|
GENERAL PURPOSE
|
| Case Connection |
ISOLATED
|
ISOLATED
|
| Configuration |
SINGLE
|
SINGLE
|
| Diode Element Material |
SILICON
|
SILICON
|
| Diode Type |
RECTIFIER DIODE
|
RECTIFIER DIODE
|
| Forward Voltage-Max (VF) |
1 V
|
|
| JEDEC-95 Code |
DO-34
|
|
| JESD-30 Code |
O-LALF-W2
|
O-LELF-R2
|
| Non-rep Pk Forward Current-Max |
4 A
|
|
| Number of Elements |
1
|
1
|
| Number of Phases |
1
|
1
|
| Number of Terminals |
2
|
2
|
| Operating Temperature-Max |
175 °C
|
175 °C
|
| Output Current-Max |
0.25 A
|
0.25 A
|
| Package Body Material |
GLASS
|
GLASS
|
| Package Shape |
ROUND
|
ROUND
|
| Package Style |
LONG FORM
|
LONG FORM
|
| Power Dissipation-Max |
0.3 W
|
0.4 W
|
| Qualification Status |
Not Qualified
|
|
| Rep Pk Reverse Voltage-Max |
125 V
|
125 V
|
| Reverse Current-Max |
0.001 µA
|
|
| Reverse Recovery Time-Max |
1.5 µs
|
1.5 µs
|
| Surface Mount |
NO
|
YES
|
| Terminal Form |
WIRE
|
WRAP AROUND
|
| Terminal Position |
AXIAL
|
END
|
| Base Number Matches |
1
|
1
|
| Additional Feature |
|
LOW LEAKAGE CURRENT
|
| JESD-609 Code |
|
e3
|
| Moisture Sensitivity Level |
|
1
|
| Peak Reflow Temperature (Cel) |
|
260
|
| Terminal Finish |
|
TIN
|
| Time@Peak Reflow Temperature-Max (s) |
|
30
|
|
|
|
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