BAS70-05/G vs BAS70-05212 feature comparison

BAS70-05/G Nexperia

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BAS70-05212 NXP Semiconductors

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Part Life Cycle Code Obsolete Obsolete
Ihs Manufacturer NEXPERIA NXP SEMICONDUCTORS
Reach Compliance Code unknown unknown
ECCN Code EAR99 EAR99
Additional Feature LOW LEAKAGE CURRENT
Application SWITCHING SWITCHING
Configuration COMMON CATHODE, 2 ELEMENTS COMMON CATHODE, 2 ELEMENTS
Diode Element Material SILICON SILICON
Diode Type RECTIFIER DIODE RECTIFIER DIODE
Forward Voltage-Max (VF) 0.41 V 0.41 V
JEDEC-95 Code TO-236AB TO-236AB
JESD-30 Code R-PDSO-G3 R-PDSO-G3
JESD-609 Code e3
Moisture Sensitivity Level 1
Non-rep Pk Forward Current-Max 0.1 A 0.1 A
Number of Elements 2 2
Number of Phases 1 1
Number of Terminals 3 3
Operating Temperature-Max 150 °C 150 °C
Operating Temperature-Min -65 °C -65 °C
Output Current-Max 0.07 A 0.07 A
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape RECTANGULAR RECTANGULAR
Package Style SMALL OUTLINE SMALL OUTLINE
Peak Reflow Temperature (Cel) 260
Rep Pk Reverse Voltage-Max 70 V 70 V
Reverse Current-Max 10 µA 10 µA
Reverse Test Voltage 70 V 70 V
Surface Mount YES YES
Technology SCHOTTKY SCHOTTKY
Terminal Finish TIN
Terminal Form GULL WING GULL WING
Terminal Position DUAL DUAL
Time@Peak Reflow Temperature-Max (s) 30
Base Number Matches 1 1
Package Description R-PDSO-G3
HTS Code 8541.10.00.70
Power Dissipation-Max 0.25 W
Qualification Status Not Qualified

Compare BAS70-05/G with alternatives

Compare BAS70-05212 with alternatives