BAV16L
vs
1N4153
feature comparison
| Part Life Cycle Code |
Active
|
Transferred
|
| Ihs Manufacturer |
CHANGZHOU GALAXY CENTURY MICROELECTRONICS CO LTD
|
NORTH AMERICAN PHILIPS DISCRETE PRODUCTS DIV
|
| Part Package Code |
DFN1006-2
|
|
| Package Description |
R-PBCC-N2
|
|
| Reach Compliance Code |
unknown
|
unknown
|
| ECCN Code |
EAR99
|
EAR99
|
| Application |
FAST RECOVERY
|
|
| Breakdown Voltage-Min |
75 V
|
|
| Configuration |
SINGLE
|
SINGLE
|
| Diode Element Material |
SILICON
|
|
| Diode Type |
RECTIFIER DIODE
|
RECTIFIER DIODE
|
| Forward Voltage-Max (VF) |
1.25 V
|
0.55 V
|
| JESD-30 Code |
R-PBCC-N2
|
|
| Non-rep Pk Forward Current-Max |
2 A
|
2 A
|
| Number of Elements |
1
|
1
|
| Number of Phases |
1
|
1
|
| Number of Terminals |
2
|
|
| Operating Temperature-Max |
150 °C
|
200 °C
|
| Operating Temperature-Min |
-65 °C
|
|
| Output Current-Max |
0.15 A
|
0.15 A
|
| Package Body Material |
PLASTIC/EPOXY
|
|
| Package Shape |
RECTANGULAR
|
|
| Package Style |
CHIP CARRIER
|
|
| Power Dissipation-Max |
0.2 W
|
|
| Rep Pk Reverse Voltage-Max |
75 V
|
75 V
|
| Reverse Current-Max |
1 µA
|
|
| Reverse Recovery Time-Max |
0.004 µs
|
0.002 µs
|
| Reverse Test Voltage |
75 V
|
|
| Surface Mount |
YES
|
NO
|
| Terminal Form |
NO LEAD
|
|
| Terminal Position |
BOTTOM
|
|
| Base Number Matches |
2
|
38
|
| Rohs Code |
|
No
|
| JESD-609 Code |
|
e0
|
| Terminal Finish |
|
Tin/Lead (Sn/Pb)
|
|
|
|
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