BAV170LT3 vs BAV170 feature comparison

BAV170LT3 Motorola Semiconductor Products

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BAV170 Galaxy Semi-Conductor Co Ltd

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Part Life Cycle Code Transferred Active
Ihs Manufacturer MOTOROLA INC GALAXY SEMI-CONDUCTOR CO LTD
Reach Compliance Code unknown unknown
ECCN Code EAR99 EAR99
HTS Code 8541.10.00.70 8541.10.00.70
Additional Feature LOW LEAKAGE CURRENT LOW LEAKAGE CURRENT
Configuration COMMON CATHODE, 2 ELEMENTS COMMON CATHODE, 2 ELEMENTS
Diode Element Material SILICON SILICON
Diode Type RECTIFIER DIODE RECTIFIER DIODE
Forward Voltage-Max (VF) 1.25 V 1.25 V
JESD-30 Code R-PDSO-G3 R-PDSO-G3
Non-rep Pk Forward Current-Max 0.5 A 4 A
Number of Elements 2 2
Number of Terminals 3 3
Operating Temperature-Max 150 °C 125 °C
Operating Temperature-Min -55 °C -65 °C
Output Current-Max 0.2 A 0.215 A
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape RECTANGULAR RECTANGULAR
Package Style SMALL OUTLINE SMALL OUTLINE
Power Dissipation-Max 0.225 W 0.25 W
Qualification Status Not Qualified
Reverse Current-Max 0.005 µA 0.005 µA
Reverse Recovery Time-Max 3 µs 0.003 µs
Surface Mount YES YES
Terminal Form GULL WING GULL WING
Terminal Position DUAL DUAL
Base Number Matches 4 17
Package Description R-PDSO-G3
Application GENERAL PURPOSE
Number of Phases 1
Peak Reflow Temperature (Cel) NOT SPECIFIED
Rep Pk Reverse Voltage-Max 85 V
Reverse Test Voltage 75 V
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED

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