BAV199HYT116 vs BAV199F2 feature comparison

BAV199HYT116 ROHM Semiconductor

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BAV199F2 Yangzhou Yangjie Electronics Co Ltd

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Part Life Cycle Code Active Active
Ihs Manufacturer ROHM CO LTD YANGZHOU YANGJIE ELECTRONICS CO LTD
Reach Compliance Code unknown compliant
ECCN Code EAR99 EAR99
HTS Code 8541.10.00.70 8541.10.00.70
Date Of Intro 2020-06-15
Samacsys Manufacturer ROHM Semiconductor
Additional Feature HIGH RELIABILITY
Application GENERAL PURPOSE FAST RECOVERY
Configuration SERIES CONNECTED, CENTER TAP, 2 ELEMENTS SERIES CONNECTED, CENTER TAP, 2 ELEMENTS
Diode Element Material SILICON SILICON
Diode Type RECTIFIER DIODE RECTIFIER DIODE
Forward Voltage-Max (VF) 1.25 V 1.25 V
JESD-30 Code R-PDSO-G3 R-PDSO-G3
JESD-609 Code e3 e3
Non-rep Pk Forward Current-Max 4 A 4 A
Number of Elements 2 2
Number of Phases 1 1
Number of Terminals 3 3
Operating Temperature-Max 150 °C 150 °C
Output Current-Max 0.215 A 0.215 A
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape RECTANGULAR RECTANGULAR
Package Style SMALL OUTLINE SMALL OUTLINE
Peak Reflow Temperature (Cel) NOT SPECIFIED
Power Dissipation-Max 0.25 W 0.25 W
Rep Pk Reverse Voltage-Max 100 V 100 V
Reverse Current-Max 0.005 µA 0.005 µA
Reverse Recovery Time-Max 3 µs 3 µs
Reverse Test Voltage 75 V 75 V
Surface Mount YES YES
Terminal Finish Tin (Sn) TIN
Terminal Form GULL WING GULL WING
Terminal Position DUAL DUAL
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Base Number Matches 1 1
Rohs Code Yes
Package Description R-PDSO-G3
Breakdown Voltage-Min 100 V

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