BAV199W-T vs BAV199E6433 feature comparison

BAV199W-T NXP Semiconductors

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BAV199E6433 Siemens

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Pbfree Code Yes
Rohs Code Yes
Part Life Cycle Code Transferred Transferred
Ihs Manufacturer NXP SEMICONDUCTORS SIEMENS A G
Package Description R-PDSO-G3
Reach Compliance Code unknown unknown
ECCN Code EAR99 EAR99
Additional Feature LOW LEAKAGE CURRENT
Configuration SERIES CONNECTED, CENTER TAP, 2 ELEMENTS SERIES CONNECTED, CENTER TAP, 2 ELEMENTS
Diode Element Material SILICON SILICON
Diode Type RECTIFIER DIODE RECTIFIER DIODE
JESD-30 Code R-PDSO-G3 R-PDSO-G3
JESD-609 Code e3
Number of Elements 2 2
Number of Terminals 3 3
Operating Temperature-Max 150 °C 150 °C
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape RECTANGULAR RECTANGULAR
Package Style SMALL OUTLINE SMALL OUTLINE
Power Dissipation-Max 0.15 W 0.33 W
Qualification Status Not Qualified Not Qualified
Rep Pk Reverse Voltage-Max 85 V
Reverse Recovery Time-Max 3 µs 3 µs
Surface Mount YES YES
Terminal Finish TIN
Terminal Form GULL WING GULL WING
Terminal Position DUAL DUAL
Base Number Matches 2 2
HTS Code 8541.10.00.70
Forward Voltage-Max (VF) 1.25 V
Non-rep Pk Forward Current-Max 4.5 A
Output Current-Max 0.2 A
Reverse Current-Max 0.005 µA

Compare BAV199W-T with alternatives

Compare BAV199E6433 with alternatives