BAV19W vs BAV19W-GT1 feature comparison

BAV19W Diodes Incorporated

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BAV19W-GT1 Sangdest Microelectronics (Nanjing) Co Ltd

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Rohs Code Yes Yes
Part Life Cycle Code Obsolete Obsolete
Ihs Manufacturer DIODES INC SANGDEST MICROELECTRONICS (NANJING) CO LTD
Reach Compliance Code compliant unknown
ECCN Code EAR99
Samacsys Manufacturer Diodes Incorporated
Configuration SINGLE SINGLE
Diode Element Material SILICON SILICON
Diode Type RECTIFIER DIODE RECTIFIER DIODE
Forward Voltage-Max (VF) 1.25 V
JESD-609 Code e3
Non-rep Pk Forward Current-Max 2.5 A
Number of Elements 1 1
Number of Phases 1 1
Operating Temperature-Max 150 °C
Output Current-Max 0.2 A 0.2 A
Peak Reflow Temperature (Cel) 260
Rep Pk Reverse Voltage-Max 100 V 100 V
Reverse Recovery Time-Max 0.05 µs 0.05 µs
Surface Mount YES YES
Terminal Finish MATTE TIN
Base Number Matches 9 1
Package Description R-PDSO-G2
Application GENERAL PURPOSE
JESD-30 Code R-PDSO-G2
Moisture Sensitivity Level 1
Number of Terminals 2
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Power Dissipation-Max 0.41 W
Qualification Status Not Qualified
Terminal Form GULL WING
Terminal Position DUAL

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Compare BAV19W-GT1 with alternatives