BAV19W vs BAS16WE6327 feature comparison

BAV19W Galaxy Semi-Conductor Co Ltd

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BAS16WE6327 Infineon Technologies AG

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Part Life Cycle Code Active Obsolete
Ihs Manufacturer GALAXY SEMI-CONDUCTOR CO LTD INFINEON TECHNOLOGIES AG
Reach Compliance Code unknown compliant
ECCN Code EAR99 EAR99
HTS Code 8541.10.00.70 8541.10.00.70
Application FAST RECOVERY
Breakdown Voltage-Min 120 V
Configuration SINGLE SINGLE
Diode Element Material SILICON SILICON
Diode Type RECTIFIER DIODE RECTIFIER DIODE
Forward Voltage-Max (VF) 1.25 V 0.715 V
JESD-30 Code R-PDSO-G2 R-PDSO-G3
Non-rep Pk Forward Current-Max 0.5 A 4.5 A
Number of Elements 1 1
Number of Phases 1 1
Number of Terminals 2 3
Operating Temperature-Max 150 °C 150 °C
Operating Temperature-Min -65 °C
Output Current-Max 0.2 A 0.25 A
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape RECTANGULAR RECTANGULAR
Package Style SMALL OUTLINE SMALL OUTLINE
Peak Reflow Temperature (Cel) NOT SPECIFIED 260
Power Dissipation-Max 0.25 W 0.25 W
Rep Pk Reverse Voltage-Max 100 V 80 V
Reverse Current-Max 0.1 µA
Reverse Recovery Time-Max 0.05 µs 0.004 µs
Reverse Test Voltage 100 V
Surface Mount YES YES
Terminal Form GULL WING GULL WING
Terminal Position DUAL DUAL
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Base Number Matches 2 2
Rohs Code Yes
Part Package Code SC-70
Package Description SOT-323, 3 PIN
Pin Count 3
Manufacturer Package Code SOT323
JESD-609 Code e3
Moisture Sensitivity Level 1
Qualification Status Not Qualified
Terminal Finish MATTE TIN

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Compare BAS16WE6327 with alternatives