BAV19W vs BAS16E6327HTSA1 feature comparison

BAV19W Sangdest Microelectronics (Nanjing) Co Ltd

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BAS16E6327HTSA1 Infineon Technologies AG

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Rohs Code No Yes
Part Life Cycle Code Active End Of Life
Ihs Manufacturer SANGDEST MICROELECTRONICS (NANJING) CO LTD INFINEON TECHNOLOGIES AG
Package Description PLASTIC PACKAGE-2 R-PDSO-G3
Reach Compliance Code compliant compliant
Configuration SINGLE COMMON ANODE, 2 ELEMENTS
Diode Element Material SILICON SILICON
Diode Type RECTIFIER DIODE RECTIFIER DIODE
JESD-30 Code R-PDSO-G2 R-PDSO-G3
Number of Elements 1 2
Number of Phases 1
Number of Terminals 2 3
Output Current-Max 0.2 A 0.2 A
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape RECTANGULAR RECTANGULAR
Package Style SMALL OUTLINE SMALL OUTLINE
Peak Reflow Temperature (Cel) NOT SPECIFIED NOT SPECIFIED
Power Dissipation-Max 0.41 W 0.33 W
Qualification Status Not Qualified Not Qualified
Rep Pk Reverse Voltage-Max 100 V 80 V
Reverse Recovery Time-Max 0.05 µs 0.004 µs
Surface Mount YES YES
Terminal Form GULL WING GULL WING
Terminal Position DUAL DUAL
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED NOT SPECIFIED
Base Number Matches 7 1
Pbfree Code Yes
Part Package Code SOT-23
Pin Count 3
ECCN Code EAR99
HTS Code 8541.10.00.70
Factory Lead Time 4 Weeks
Samacsys Manufacturer Infineon
Application GENERAL PURPOSE
JESD-609 Code e3
Moisture Sensitivity Level 1
Operating Temperature-Max 150 °C
Terminal Finish Matte Tin (Sn)

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Compare BAS16E6327HTSA1 with alternatives