BAV19W-V-GS08 vs BAV10136 feature comparison

BAV19W-V-GS08 Vishay Intertechnologies

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BAV10136 NXP Semiconductors

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Rohs Code Yes
Part Life Cycle Code Obsolete Obsolete
Ihs Manufacturer VISHAY INTERTECHNOLOGY INC NXP SEMICONDUCTORS
Package Description ROHS COMPLIANT PACKAGE-2 O-LALF-W2
Reach Compliance Code compliant unknown
Application GENERAL PURPOSE GENERAL PURPOSE
Configuration SINGLE SINGLE
Diode Element Material SILICON SILICON
Diode Type RECTIFIER DIODE RECTIFIER DIODE
Forward Voltage-Max (VF) 1 V 1.25 V
JESD-30 Code R-PDSO-G2 O-LALF-W2
JESD-609 Code e3
Non-rep Pk Forward Current-Max 1 A 9 A
Number of Elements 1 1
Number of Phases 1 1
Number of Terminals 2 2
Operating Temperature-Max 150 °C 200 °C
Output Current-Max 0.2 A 0.3 A
Package Body Material PLASTIC/EPOXY GLASS
Package Shape RECTANGULAR ROUND
Package Style SMALL OUTLINE LONG FORM
Power Dissipation-Max 0.41 W 0.35 W
Qualification Status Not Qualified Not Qualified
Rep Pk Reverse Voltage-Max 120 V 60 V
Reverse Recovery Time-Max 0.05 µs 0.006 µs
Surface Mount YES NO
Terminal Finish MATTE TIN
Terminal Form GULL WING WIRE
Terminal Position DUAL AXIAL
Base Number Matches 1 1
ECCN Code EAR99
HTS Code 8541.10.00.70
Case Connection ISOLATED
JEDEC-95 Code DO-35
Reverse Current-Max 0.1 µA

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