BAV21 vs BAV21 feature comparison

BAV21 International Semiconductor Inc

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BAV21 NXP Semiconductors

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Part Life Cycle Code Obsolete Transferred
Ihs Manufacturer INTERNATIONAL SEMICONDUCTOR INC NXP SEMICONDUCTORS
Reach Compliance Code unknown compliant
ECCN Code EAR99 EAR99
HTS Code 8541.10.00.70 8541.10.00.70
Case Connection ISOLATED ISOLATED
Configuration SINGLE SINGLE
Diode Element Material SILICON SILICON
Diode Type RECTIFIER DIODE RECTIFIER DIODE
Forward Voltage-Max (VF) 1 V 1.25 V
JEDEC-95 Code DO-35 DO-35
JESD-30 Code O-LALF-W2 O-LALF-W2
Number of Elements 1 1
Number of Phases 1 1
Number of Terminals 2 2
Operating Temperature-Max 175 °C 175 °C
Output Current-Max 0.25 A 0.25 A
Package Body Material GLASS GLASS
Package Shape ROUND ROUND
Package Style LONG FORM LONG FORM
Power Dissipation-Max 0.4 W 0.4 W
Qualification Status Not Qualified Not Qualified
Rep Pk Reverse Voltage-Max 250 V 250 V
Reverse Recovery Time-Max 0.05 µs 0.05 µs
Surface Mount NO NO
Terminal Form WIRE WIRE
Terminal Position AXIAL AXIAL
Base Number Matches 1 11
Pbfree Code Yes
Rohs Code Yes
Part Package Code DO-35
Package Description HERMETIC SEALED, GLASS, SC-40, 2 PIN
Pin Count 2
Samacsys Manufacturer NXP
JESD-609 Code e3
Moisture Sensitivity Level 1
Non-rep Pk Forward Current-Max 5 A
Peak Reflow Temperature (Cel) 260
Reference Standard CECC50001-022
Reverse Current-Max 0.1 µA
Terminal Finish Tin (Sn)
Time@Peak Reflow Temperature-Max (s) 30

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