BAV23 vs BAV23/DG feature comparison

BAV23 YAGEO Corporation

Buy Now Datasheet

BAV23/DG NXP Semiconductors

Buy Now Datasheet
Part Life Cycle Code Obsolete Obsolete
Ihs Manufacturer PHILIPS COMPONENTS NXP SEMICONDUCTORS
Reach Compliance Code unknown unknown
ECCN Code EAR99 EAR99
HTS Code 8541.10.00.70 8541.10.00.70
Configuration SEPARATE, 2 ELEMENTS SEPARATE, 2 ELEMENTS
Diode Element Material SILICON SILICON
Diode Type RECTIFIER DIODE RECTIFIER DIODE
Forward Voltage-Max (VF) 1 V 1.25 V
JESD-30 Code R-PDSO-G4 R-PDSO-G4
Number of Elements 2 2
Number of Terminals 4 4
Output Current-Max 0.2 A 0.125 A
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape RECTANGULAR RECTANGULAR
Package Style SMALL OUTLINE SMALL OUTLINE
Qualification Status Not Qualified Not Qualified
Reverse Recovery Time-Max 0.05 µs 0.05 µs
Surface Mount YES YES
Terminal Form GULL WING GULL WING
Terminal Position DUAL DUAL
Base Number Matches 10 1
Package Description R-PDSO-G4
Pin Count 4
Additional Feature HALOGEN FREE
Operating Temperature-Max 150 °C
Operating Temperature-Min -65 °C
Power Dissipation-Max 0.25 W
Rep Pk Reverse Voltage-Max 250 V
Reverse Current-Max 100 µA
Reverse Test Voltage 200 V

Compare BAV23 with alternatives

Compare BAV23/DG with alternatives