BAV70
vs
BZV55-B3V9,135
feature comparison
| Rohs Code |
No
|
Yes
|
| Part Life Cycle Code |
Transferred
|
Transferred
|
| Ihs Manufacturer |
NATIONAL SEMICONDUCTOR CORP
|
NXP SEMICONDUCTORS
|
| Package Description |
R-PDSO-G3
|
HERMETIC SEALED, GLASS PACKAGE-2
|
| Reach Compliance Code |
unknown
|
unknown
|
| ECCN Code |
EAR99
|
EAR99
|
| HTS Code |
8541.10.00.70
|
8541.10.00.50
|
| Configuration |
COMMON CATHODE, 2 ELEMENTS
|
SINGLE
|
| Diode Element Material |
SILICON
|
SILICON
|
| Diode Type |
RECTIFIER DIODE
|
ZENER DIODE
|
| Forward Voltage-Max (VF) |
1.25 V
|
|
| JEDEC-95 Code |
TO-236AB
|
|
| JESD-30 Code |
R-PDSO-G3
|
O-LELF-R2
|
| JESD-609 Code |
e0
|
|
| Non-rep Pk Forward Current-Max |
2 A
|
|
| Number of Elements |
2
|
1
|
| Number of Terminals |
3
|
2
|
| Operating Temperature-Max |
150 °C
|
200 °C
|
| Output Current-Max |
0.2 A
|
|
| Package Body Material |
PLASTIC/EPOXY
|
GLASS
|
| Package Shape |
RECTANGULAR
|
ROUND
|
| Package Style |
SMALL OUTLINE
|
LONG FORM
|
| Power Dissipation-Max |
0.35 W
|
0.4 W
|
| Qualification Status |
Not Qualified
|
Not Qualified
|
| Rep Pk Reverse Voltage-Max |
70 V
|
|
| Reverse Current-Max |
5 µA
|
|
| Reverse Recovery Time-Max |
0.006 µs
|
|
| Surface Mount |
YES
|
YES
|
| Terminal Finish |
Tin/Lead (Sn/Pb)
|
|
| Terminal Form |
GULL WING
|
WRAP AROUND
|
| Terminal Position |
DUAL
|
END
|
| Base Number Matches |
4
|
2
|
| Pin Count |
|
2
|
| Case Connection |
|
ISOLATED
|
| Operating Temperature-Min |
|
-65 °C
|
| Polarity |
|
UNIDIRECTIONAL
|
| Reference Voltage-Nom |
|
3.9 V
|
| Technology |
|
ZENER
|
| Voltage Tol-Max |
|
2%
|
| Working Test Current |
|
5 mA
|
|
|
|
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