BAV70W vs BAV70G feature comparison

BAV70W Rochester Electronics LLC

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BAV70G Galaxy Microelectronics

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Pbfree Code Yes
Rohs Code Yes
Part Life Cycle Code Active Active
Ihs Manufacturer ROCHESTER ELECTRONICS INC CHANGZHOU GALAXY CENTURY MICROELECTRONICS CO LTD
Package Description R-PDSO-G3
Pin Count 3
Reach Compliance Code unknown unknown
Additional Feature HIGH SPEED SWITCH
Configuration COMMON CATHODE, 2 ELEMENTS COMMON CATHODE, 2 ELEMENTS
Diode Element Material SILICON SILICON
Diode Type RECTIFIER DIODE RECTIFIER DIODE
JESD-30 Code R-PDSO-G3 R-PDSO-G3
JESD-609 Code e3
Moisture Sensitivity Level NOT SPECIFIED
Number of Elements 2 2
Number of Terminals 3 3
Output Current-Max 0.2 A 0.075 A
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape RECTANGULAR RECTANGULAR
Package Style SMALL OUTLINE SMALL OUTLINE
Peak Reflow Temperature (Cel) 260
Power Dissipation-Max 0.25 W 0.25 W
Qualification Status COMMERCIAL
Rep Pk Reverse Voltage-Max 85 V 75 V
Reverse Recovery Time-Max 0.004 µs 0.004 µs
Surface Mount YES YES
Terminal Finish MATTE TIN
Terminal Form GULL WING GULL WING
Terminal Position DUAL DUAL
Time@Peak Reflow Temperature-Max (s) 40
Base Number Matches 31 3
ECCN Code EAR99
Application FAST RECOVERY
Breakdown Voltage-Min 75 V
Forward Voltage-Max (VF) 1.25 V
Non-rep Pk Forward Current-Max 4 A
Number of Phases 1
Operating Temperature-Max 150 °C
Reverse Current-Max 2.5 µA
Reverse Test Voltage 70 V