BAV99 vs 1SS250TE85R feature comparison

BAV99 Dynex Semiconductor

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1SS250TE85R Toshiba America Electronic Components

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Rohs Code No
Part Life Cycle Code Obsolete Active
Ihs Manufacturer GEC PLESSEY SEMICONDUCTORS TOSHIBA CORP
Part Package Code SOT-23
Package Description R-PDSO-G3
Pin Count 3
Reach Compliance Code unknown unknown
ECCN Code EAR99 EAR99
HTS Code 8541.10.00.70 8541.10.00.70
Diode Element Material SILICON SILICON
Diode Type RECTIFIER DIODE RECTIFIER DIODE
Forward Voltage-Max (VF) 1.3 V 1.2 V
JEDEC-95 Code TO-236
JESD-30 Code R-PDSO-G3 R-PDSO-G3
JESD-609 Code e0
Number of Elements 2 1
Number of Terminals 3 3
Operating Temperature-Max 175 °C 125 °C
Output Current-Max 0.1 A 0.1 A
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape RECTANGULAR RECTANGULAR
Package Style SMALL OUTLINE SMALL OUTLINE
Qualification Status Not Qualified Not Qualified
Rep Pk Reverse Voltage-Max 70 V
Reverse Recovery Time-Max 0.006 µs 0.06 µs
Surface Mount YES YES
Terminal Finish TIN LEAD
Terminal Form GULL WING GULL WING
Terminal Position DUAL DUAL
Base Number Matches 1 2
Configuration SINGLE
Non-rep Pk Forward Current-Max 2 A
Number of Phases 1
Peak Reflow Temperature (Cel) NOT SPECIFIED
Power Dissipation-Max 0.15 W
Reverse Current-Max 1 µA
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED

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