BAV99 vs BAV99-GT1 feature comparison

BAV99 Dynex Semiconductor

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BAV99-GT1 Sangdest Microelectronics (Nanjing) Co Ltd

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Rohs Code No Yes
Part Life Cycle Code Obsolete Obsolete
Ihs Manufacturer GEC PLESSEY SEMICONDUCTORS SANGDEST MICROELECTRONICS (NANJING) CO LTD
Part Package Code SOT-23
Package Description R-PDSO-G3 R-PDSO-G3
Pin Count 3
Reach Compliance Code unknown unknown
ECCN Code EAR99
HTS Code 8541.10.00.70
Diode Element Material SILICON SILICON
Diode Type RECTIFIER DIODE RECTIFIER DIODE
Forward Voltage-Max (VF) 1.3 V
JEDEC-95 Code TO-236
JESD-30 Code R-PDSO-G3 R-PDSO-G3
JESD-609 Code e0
Number of Elements 2 2
Number of Terminals 3 3
Operating Temperature-Max 175 °C
Output Current-Max 0.1 A 0.15 A
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape RECTANGULAR RECTANGULAR
Package Style SMALL OUTLINE SMALL OUTLINE
Qualification Status Not Qualified Not Qualified
Rep Pk Reverse Voltage-Max 70 V 75 V
Reverse Recovery Time-Max 0.006 µs 0.006 µs
Surface Mount YES YES
Terminal Finish TIN LEAD
Terminal Form GULL WING GULL WING
Terminal Position DUAL DUAL
Base Number Matches 1 1
Configuration SERIES CONNECTED, CENTER TAP, 2 ELEMENTS
Moisture Sensitivity Level 1
Power Dissipation-Max 0.35 W

Compare BAV99 with alternatives

Compare BAV99-GT1 with alternatives