BAV99-GT1
vs
BAT49B2
feature comparison
| Rohs Code |
Yes
|
|
| Part Life Cycle Code |
Obsolete
|
Obsolete
|
| Ihs Manufacturer |
SANGDEST MICROELECTRONICS (NANJING) CO LTD
|
STMICROELECTRONICS
|
| Package Description |
R-PDSO-G3
|
O-LALF-W2
|
| Reach Compliance Code |
unknown
|
unknown
|
| Configuration |
SERIES CONNECTED, CENTER TAP, 2 ELEMENTS
|
SINGLE
|
| Diode Element Material |
SILICON
|
SILICON
|
| Diode Type |
RECTIFIER DIODE
|
RECTIFIER DIODE
|
| JESD-30 Code |
R-PDSO-G3
|
O-LALF-W2
|
| Moisture Sensitivity Level |
1
|
|
| Number of Elements |
2
|
1
|
| Number of Terminals |
3
|
2
|
| Output Current-Max |
0.15 A
|
0.5 A
|
| Package Body Material |
PLASTIC/EPOXY
|
GLASS
|
| Package Shape |
RECTANGULAR
|
ROUND
|
| Package Style |
SMALL OUTLINE
|
LONG FORM
|
| Power Dissipation-Max |
0.35 W
|
|
| Qualification Status |
Not Qualified
|
Not Qualified
|
| Rep Pk Reverse Voltage-Max |
75 V
|
80 V
|
| Reverse Recovery Time-Max |
0.006 µs
|
|
| Surface Mount |
YES
|
NO
|
| Terminal Form |
GULL WING
|
WIRE
|
| Terminal Position |
DUAL
|
AXIAL
|
| Base Number Matches |
1
|
1
|
| ECCN Code |
|
EAR99
|
| HTS Code |
|
8541.10.00.70
|
| Case Connection |
|
ISOLATED
|
| Forward Voltage-Max (VF) |
|
1 V
|
| Non-rep Pk Forward Current-Max |
|
10 A
|
| Operating Temperature-Max |
|
125 °C
|
| Operating Temperature-Min |
|
-65 °C
|
| Reverse Current-Max |
|
200 µA
|
| Technology |
|
SCHOTTKY
|
|
|
|
Compare BAV99-GT1 with alternatives
Compare BAT49B2 with alternatives